[10a-N303-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10a-N303-8] Device Design Guideline for High-Performance Si-based Spin MOSFETs

〇Yuki Takahashi¹, Shoichi Sato^1,2, Masaaki Tanaka^1,2, Ryosho Nakane^1,3 (1.EEIS, Tokyo Univ., 2.CSRN, Tokyo Univ., 3.d.lab, Tokyo Univ.)

Keywords:

Semiconductor Spintronics,Silicon,Spin MOSFET

A spin MOSFET has the same device structure as an ordinary MOSFET while its source and drain electrodes are ferromagnetic materials, which allows the change in the output current according to the relative magnetization between parallel and antiparallel states. Several demonstration examples of Si-based Spin MOSFETs have been reported, but further improvement in performance is necessary for practical applications. Here, we study various characteristics of spin MOSFETs with a ferromagnetic Fe/Mg/MgO/SiOx/n+Si tunnel junction, to find a device design guideline for spin MOSFETs with higher magnetoresistance ratio. Based on our spin transport model, the bias dependence of MR ratio and the spin polarization Ps are mainly analyzed through spin-valve and Hanle signals.