[10a-N303-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10a-N303-9] Non local detection of current induced magnetization switching using lateral spin-valve device

〇(DC)Mineto Ogawa¹, Yu Osada¹, Michihiko Yamanouchi¹, Tetsuya Uemura¹ (1.IST. Hokkaido Univ.)

Keywords:

semiconductor,spin injection,SOT switching

Spin injection from ferromagnetic electrode into semiconductor and an electrical manipulation of magnetization direction are indispensable technologies for realizing spin transistors.In this work, we fabricated a lateral spin valve device with Pt/CoFe electrodes and n-GaAs spin transport channel and detected the spin-orbit torque (SOT) induced magnetization switching of in-plane magnetized CoFe electrode through the non-local spin-valve measurement.