[10a-N305-1~11] CS.11 Code-sharing session of 12.6&12.7

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[10a-N305-11] Ion response characteristics of a CMOS array sensor with TiN electrodes and biosensing applications

Zhi Shun Chew¹, 〇hideo doi¹, Tomoko Horio¹, Yong-Joon Choi¹, Kazuhiro Takahashi¹, Toshihiko Noda¹, Kazuaki Sawada¹ (1.Toyohashi Univ.)

Keywords:

Ion imaging,Titanium nitride,CMOS potentiometric array sensor

Toward the high-spatiotemporal imaging of extracellular chemical transmitters in brain, we have been previously considered the application of CMOS array sensor deposited with electrically conductive titanium nitride (TiN). The TiN is widely used as a barrier metal at contact, good affinity to CMOS process. In this study, ion response characteristics of a 4.19 µm-pitch CMOS potentiometric array sensor was evaluated. Additionally, plasticized PVC-based ion-selective membrane was coated on the sensor and investigated for biosensing applications.