[10a-N401-1~9] 13.3 Insulator technology

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N401-3] Physical Meaning of Linear-Parabolic growth retardation during oxidation on Si(111)

〇(M1)Hengyu Wen¹, Yasutaka Tsuda², Yuki Okabe¹, Akitaka Yoshigoe², Yuji Takakuwa³, Shuichi Shuichi Ogawa¹ (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)

Keywords:

silicon oxide film,Interface oxidation,Real-time XPS

In this study, the Si(111)surface oxidation process was observed using real-time XPS. Based on the oxygen pressure and temperature dependence of the initial delay in Linear-Parabolic growth within the dry oxidation of Si-which involves two types of first-order reactions and a zeroth-order reaction (L-P growth)-the role of defect states at the interface during oxidation was examined. A unified Si oxidation reaction model (Loops A/B & L-P growth) was proposed. The results revealed that Loop L-P originates from the branching point of two (P_b0 + P_b1) defects, where minority carrier trapping occurs prior to the two-step oxidation along the Loop B reaction pathway. It was further demonstrated that the dangling bonds generated by Si-O bond cleavage function as sites for O₂ dissociative adsorption.