The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.3 Insulator technology

[10a-N401-1~9]13.3 Insulator technology

Wed. Sep 10, 2025 9:00 AM - 11:15 AM JST
Wed. Sep 10, 2025 12:00 AM - 2:15 AM UTC
N401 (Lecture Hall North)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-N401-1]Si substrate orientation dependence of the gate insulator formation

〇Yukitomo Morita1, Masashi Tsuruguchi1, Ken Hayakawa2, Haruo Sudo2, Koji Izunome2, Shun-ichiro Ohmi1 (1.Sci. Tokyo, 2.GWJ Co., Ltd.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-N401-2]Intrinsic stress of thermal oxide film on Si(100) surface and emission of self-interstitials

〇Eiji Kamiyama1,2, Koji Sueoka2 (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N401-3]Physical Meaning of Linear-Parabolic growth retardation during oxidation on Si(111)

〇(M1)Hengyu Wen1, Yasutaka Tsuda2, Yuki Okabe1, Akitaka Yoshigoe2, Yuji Takakuwa3, Shuichi Shuichi Ogawa1 (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-N401-4]Atomic Scale Insights into Structures of Si Thermal Oxide/Si Interface

〇Hiroyuki Kageshima1, Insung Seo1, Toru Akiyama2, Kenji Shiraishi3 (1.Shimane Univ., 2.Mie Univ., 3.Tohoku Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[10a-N401-5]SiO2 reliability consideration in terms of oxidation kinetics difference of Ge from Si

〇Akira Toriumi1 (1.None)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[10a-N401-6]Influence of Surface Potential Fluctuation on Evaluation of Interface State Density by High-frequency CV method

〇Shinichi Takagi1, Kasidit Toprasertpong,2 (1.Teikyo Univ., 2.The Univ. Tokyo)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[10a-N401-7]Evaluation of HfO2/Si MOS Interface Properties on Si(110) Vicinal Substrates

〇Ryotaro Shimura1, Eishin Nako1, Koji Matsumoto2, Akihiro Suzuki2, Hiroaki Yamamoto2, Kazuhito Matsukawa2, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1.Uinv. Tokyo, 2.SUMCO Corp.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[10a-N401-8]Insulation and interfacial properties of low temperature sputter HfO2 MOSCAP

〇(M1)Shunsuke Takaki1, Toshiyuki Yoshida1, Wenchang Yeh1 (1.Shimane Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-N401-9]Interfacial Dipole Layer Modulation Induced by Ferroelectric Polarization Charges of HfO2 Thin Film: A Molecular Dynamics Study

〇Takanobu Watanabe1, Jumpei Ohba1, Sora Yamamoto1, Yusuke Nishimura1 (1.Waseda Univ.)
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