[10a-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N402-8] N composition changes influenced by Sb surfactant effect in GaAs/GaInNAsSb core-multishell nanowires

〇(M2)Takuto Goto¹, Kaito Nakama¹, Hidetoshi Hashimoto¹, Keisuke Minehisa¹, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE)

Keywords:

nanowire,dilute nitride,molecular beam epitaxy

In this presentation, we will report on N composition changes influencd by Sb surfactant effect in GaAs/GaInNAsSb core-multishale nanowires grown by molecular beam epitaxy.