[10a-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy | The 86th JSAP Autumn Meeting 2025

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Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[10a-N402-1~11]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 10, 2025 9:00 AM - 12:00 PM JST
Wed. Sep 10, 2025 12:00 AM - 3:00 AM UTC

N402 (Lecture Hall North)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-N402-1]Improving optical property of InP/InAs heterostructure nanowire array grown by self-catalyzed vapor-liquid-solid mode

〇Guoqiang Zhang^1,2, Haoche Zhou¹, Masato Takiguchi^1,2, Hideki Gotoh³, Haruki Sanada¹ (1.NTT BRL, 2.NTT NPC, 3.Hiroshima Univ.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N402-2]Selective-area growth of InGaAs nanowire on SOI with SiON/W/SiO₂ multi-layer mask

〇Keita Taniyama¹, Yuki Azuma¹, Kai Fujimoto¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.GS of IST and RCIQE, Hokkaido Univ.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-N402-3]Selective-area MOVPE of WZ-AlInP fins on InP(111)A

〇Yuki Azuma¹, Ziye Zheng¹, Taniyama Keita¹, Uchida Ryosei¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.RCIQE)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N402-4]Thermal annealing effect of InAs nanowires by selective-area growth

〇Doma Hachimiya^1,2, Yuki Azuma^1,2, Keita Taniyama^1,2, Ryosei Uchida^1,2, Katsuhiro Tomioka^1,2, Junichi Motohisa^1,2 (1.Hokkaido Univ., 2.RCIQE)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N402-5]Utilization of droplet etching for a 100% yield of vertical GaAs nanowires on 2-inch SiO_x/Si(111) wafers

〇Keisuke Minehisa¹, Mahiro Sano¹, Sota Wajima¹, Takuto Goto¹, Kaito Nakama¹, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N402-6]Interfacial Strain near Pinholes at the Nucleation Stage of Self-Catalyzed GaAs NWs on Si(111)

〇Kaito Nakama^1,2, Fumitaro Ishikawa^1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[10a-N402-7]Effect of Quantum Well Number on the Optical Properties of GaAs/GaNAs/GaAs Core Multi-Shells Nanowires on 2-inch Si Wafer

〇Kantaro Sugihara^1,2, Keisuke Minehisa^1,2, Mahiro Sano^1,2, Ishikawa Fumitaro² (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N402-8]N composition changes influenced by Sb surfactant effect in GaAs/GaInNAsSb core-multishell nanowires

〇(M2)Takuto Goto¹, Kaito Nakama¹, Hidetoshi Hashimoto¹, Keisuke Minehisa¹, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N402-9]MBE growth of GaSb nanowires using HSQ mask

〇(D)Soh Komatsu¹, Masashi Akabori¹ (1.CNMT, JAIST)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[10a-N402-10]Radiation-Based Evaluation of the Onset of Compositional Grading Non-Uniformity in the SGB Layer Caused by Dislocation Slip Plane Anisotropy in Lattice-Mismatched InGaAs Solar Cells

〇Naoki Hashimoto¹, Akio Ogura², Mitsuru Imaizumi³, Hidetoshi Suzuki¹ (1.Miyazaki Univ., 2.Tsukuba Univ, 3.Sanjo City Univ)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[10a-N402-11]Effects of distance between holes of Porous Si substrate on GaAs thin film growth

〇Momoko Sakuma¹, Ryunosuke Minamoto¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

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