Presentation Information
[10a-P01-9]Silicon plasmonics for sensitivity enhancement in deep-ultraviolet region
〇Atsushi Ono1,2, Yu-ichiro Tanaka1, Wataru Inami1,2, Yoshimasa Kawata1,2 (1.Shizuoka Univ., 2.RIE, Shizuoka Univ.)
Keywords:
plasmon,silicon,photodetector
We focused on silicon (Si) exhibits a negative real permittivity in the deep ultraviolet (DUV) region, and considered that surface plasmon resonance (SPR) induced by photoexcited carriers in Si could directly enhance the photocurrent. Based on this idea, we experimentally demonstrated a significant improvement in DUV sensitivity of a photoconductive Si sensor. By fabricating a 210 nm period corrugated nanostructure on the Si surface and irradiating it with 266 nm DUV light, the sensitivity was enhanced by approximately three times compared to a flat surface of Si sensor. This study presents a new direction for plasmonics applications, utilizing the metal-like optical response of semiconductor.