Presentation Information
[10a-P04-5]TCAD and Experimental Analysis of the Geometric Component in Charge Pumping Current of p-Channel SiC MOSFETs
〇(M2)Kazuma Shimura1, Dai Okamoto1, Yuta Taguchi1, Kenta Kimata1, Mitsuru Sometani2, Hirohisa Hirai2, Mitsuo Okamoto2, Tetsuo Hatakeyama1 (1.Toyama Pref. Univ., 2.AIST)
Keywords:
semiconductor,Simulation
This study presents a TCAD-based analysis of the charge pumping (CP) current in SiC pMOSFETs with varying gate lengths. The geometric component (GC) of the CP current originates from non-uniform hole distri bution in the channel region during gate voltage transi tions, caused by limited hole mobility. Both experiments and TCAD simulations confirmed that the GC can be ef fectively suppressed by setting the gate voltage rise and fall times sufficiently long to ensure uniform hole concen tration, thereby enabling accurate characterization of in terface trap density (Dit) in SiC MOS interfaces.