[10a-P04-1~22] 13.7 Compound and power devices, process technology and characterization | The 86th JSAP Autumn Meeting 2025

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Poster presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[10a-P04-1~22]13.7 Compound and power devices, process technology and characterization

Wed. Sep 10, 2025 9:30 AM - 11:30 AM JST
Wed. Sep 10, 2025 12:30 AM - 2:30 AM UTC

P04 (Gymnasium)

[10a-P04-1]High temperature resistant interconnection for power device using Ni nanoparticle paste

〇Keiko Koshiba¹, Kohei Tatsumi² (1.KISTEC, 2.Waseda Univ.)

[10a-P04-2]Leakage current increase of gamma-irradiated 4H-SiC JFET

〇Akinori Takeyama¹, Takahiro Makino¹, Shin-Ichiro Kuroki², Yasunori Tanaka³, Takeshi Ohshima¹ (1.QST, 2.Hiroshima Univ., 3.AIST)

[10a-P04-3]Investigation of electronic properties of the SiC/SiO₂ Interface in High-temperature SiC-SBD by Micro-Raman Spectroscopy

〇Shu Ishida¹, Tatsuya Kiyozumi¹, Jun Suda¹ (1.Chukyo Univ.)

[10a-P04-4]TCAD and Experimental Analysis of Geometric Components of Charge Pumping Current in n-SiC MOSFETs

〇Kenta Kimata¹, Kazuma Simura¹, Dai Okamoto¹, Mitsuru Sometani², Hirohisa Hirai², Mitsuo Okamoto², Tetsuo Hatakeyama¹ (1.Toyama Pref. Univ., 2.AIST)

[10a-P04-5]TCAD and Experimental Analysis of the Geometric Component in Charge Pumping Current of p-Channel SiC MOSFETs

〇(M2)Kazuma Shimura¹, Dai Okamoto¹, Yuta Taguchi¹, Kenta Kimata¹, Mitsuru Sometani², Hirohisa Hirai², Mitsuo Okamoto², Tetsuo Hatakeyama¹ (1.Toyama Pref. Univ., 2.AIST)

[10a-P04-6]Theoretical analysis for structural stability and band alignments at nitrogen incorporated 4H-SiC/SiO₂ interface

〇Naoto Ise¹, Toru Akiyama¹, Tetsuo Hatakeyama², Kenji Shiraishi³, Takashi Nakayama⁴ (1.Mie Univ., 2.Toyama Pref. Univ., 3.Tohoku Univ., 4.Chiba Univ.)

[10a-P04-7]Demonstration of near-field etching using oxygen as a radical source for SiC wafer

〇Reo Yoshimatsu¹, Kyohei Yoshida², Shoji Nagaoka^2,3, Makoto Takafuji¹ (1.Faculty of Advanced Science and Technology, Kumamoto University, Kumamoto, 850-8555, Japan, 2.Kumamoto Industrial Research Institute, Kumamoto, 892-0901, Japan, 3.Kumamoto Innovative Development Organization, Kumamoto University, Kumamoto 850-8555, Japan)

[10a-P04-8]Evaluation of stress distribution on GaN wafer applied with bending stress

〇Kodai Matsushita¹, Takuto Matsuda¹, Jun Suda¹ (1.Chukyo Univ.)

[10a-P04-9]Thermionic Emission Property of Cs Deposited Mg-Doped InGaN and Its Temperature Dependence

〇Jotaro Tashiro¹, Shigeya Kimura², Hisao Miyazaki², Akihisa Ogino¹ (1.Shizuoka Univ., 2.Toshiba Corp.)

[10a-P04-10]Analysis of the electronic properties of stress-loaded GaN substrates by Raman spectroscopy

〇Takuto Matsuda¹, Kodai Matsushita¹, Jun Suda¹ (1.Chukyo Univ.)

[10a-P04-11]Study on resonant tunneling diodes based on polarization-matched epitaxial structures with multicomponent group-III nitrides (2)

〇(M1)hikaru imaizumi¹, akira mase¹, takashi egawa¹, makoto miyoshi¹ (1.Nagoya Institute of Tech)

[10a-P04-12]Fabrication of Si(111)/Diamond Templates for Advanced III-Nitride Process

〇(M1C)Hikaru Iwamoto¹, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ.)

[10a-P04-13]Characterization of processed n-GaN surface by electrochemical impedance spectroscopy

〇Takahiro Shimazaki¹, Enku Takahashi¹, Satoaki Akazawa¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

[10a-P04-14]Isolation Characteristics of GaN Mesas on Diamond Substrates
Fabricated Using the Surface-Activated Bonding

〇Yosei Sunamoto¹, Tetsuya Suemitsu², Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ., 2.Tohoku Univ.)

[10a-P04-15]Attempt to control p-GaN MOS interfaces by combining photoelectrochemical etching and 850℃ annealing

〇Masanobu Takahashi¹, Takahiro Shimazaki¹, Taketomo Sato¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

[10a-P04-16]Investigation of effects of 850℃ annealing prior to activation annealing on Mg-ion-implanted GaN using MOS structures

〇Hinata Karasawa¹, Masanobu Takahashi¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

[10a-P04-17]Characterization of p-type GaInN/GaN MQWs for GaN-based HBTs

〇Ryosei Inoue¹, Sotaro Ishida¹, Akira Mase¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. of Tech.)

[10a-P04-18]Electrical characterization of ud-AlGaN/n-GaN structures by electrochemical methods

〇Enku Takahashi¹, Takahiro Shimazaki¹, Satoaki akazawa¹, Kazuhide Kumakura¹, Yoshitaka Taniyasu², Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.NTT Basic Research Labs)

[10a-P04-19]Electrical properties of recessed-gate AlGaN/GaN heterostructure transistors processed by contactless-photoelectrochemical (CL-PEC) etching

〇Tokachi Katsumata¹, Naoki Shiozawa¹, Haruki Okano¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

[10a-P04-20]Deposition Mechanism of Al_1-xTi_xO_y Gate Insulator Films for GaN-based MIS Devices by Mist-CVD

〇Hiroshi Otake¹, Yusui Nakamura¹, Zenji Yatabe¹ (1.Kumamoto Univ.)

[10a-P04-21]Mist Thermal Oxidation Process for GaN Surface Oxidation

〇Ryosuke Hamasuna¹, Thin Nu Soe¹, Takumi Hirakura¹, Yusui Nakamura¹, Zenji Yatabe¹ (1.Kumamoto Univ.)

[10a-P04-22]Mist Thermal Oxidation of GaN Surface for Mist Etching

〇Takumi Hirakura¹, Thin Nu Soe¹, Ryosuke Hamasuna¹, Yusui Nakamura¹, Zenji Yatabe¹ (1.Kumamoto Univ.)

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