[10a-S102-1~9] 17.3 Layered materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[10a-S102-7] A study on CMOS for Molybdenum Disulfide Thin Film Transistors

〇Masamichi Tsuchida¹, Xu Chenghao¹, Kousaku Shimizu¹ (1.Nihon Univ.)

Keywords:

two dimensional material,Molybdenum sulfide,Thin-film transistors

In recent years, 2D materials, such as molybdenum disulfide, have been actively researched as high mobility materials. In this study, thin films are prepared by sputtering in order to fabricate large areas. Our research so far has revealed that n-type/p-type can be controlled by the work function of the electrode or the amount of oxygen mixed in, and that the performance of each TFT characteristic can be improved by performing atomic hydrogen or oxygen treatment. Based on these findings, we report the results of fabricating a CMOS without changing the metal used for the source and drain electrodes.