The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[10a-S102-1~9]17.3 Layered materials

Wed. Sep 10, 2025 9:00 AM - 11:30 AM JST
Wed. Sep 10, 2025 12:00 AM - 2:30 AM UTC
S102 (Lecture Hall South)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-S102-1][The 58th Young Scientist Presentation Award Speech] Understanding and Advancing Substitutionally Doped 2D Materials Through the Hydrogen Model

〇Kaito Kanahashi1, Tomonori Nishimura1, Kosuke Nagashio1 (1.U. Tokyo)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-S102-2]P-type nitrogen doping activated by sulfur-vapor annealing from crystalized WS2 film

〇Kaede Teraoka1, Soma Ito1, Jaehyo Jang1, Naoki Matsunaga1, Shunsuke Nozawa1, Taiga Fuse1, Takuya Hoshii1, Kuniyuki Kakushima1, Hitoshi Wakabayashi2 (1.Science Tokyo, 2.Science Tokyo IIR)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S102-3]Esaki Diode device evaluation using highly substitutional doped WSe2

〇Toshinari Sugiyama1, Satoru Morito2, Tomonori Nishimura1, Kaito Kanahashi1, Takashi Taniguchi3, Kenji Watanabe3, Keiji Ueno2, Kosuke Nagashio1 (1.UTokyo, 2.Saitama Univ., 3.NIMS)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-S102-4]Fabrication and Electrical Characterization of WSe2 nFET Using Surface Plasma Treatment Under Source and Drain Electrodes

〇Takamasa Kawanago1,2, Takumi Inaba1, Naoya Okada1 (1.SFRC, AIST, 2.PRESTO/JST)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S102-5]Composition Ratio x Control in Layered Metal NixNb1-xS2 and Contact Formation Technology for Monolayer MoS2-channel nFETs

〇Koki Hori1,2, Wen-Hsin Chang1, Toshifumi Irisawa1, Atsushi Ogura2,3, Naoya Okada1 (1.SFRC, AIST, 2.Meiji Univ., 3.MREL)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S102-6]Intermolecular Interaction Effects in Nanoscale Doping of 2D Semiconductors With Hetero Molecule

〇Takashi Kobayashi1, Daisuke Kiriya1 (1.Univ. of Tokyo)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[10a-S102-7]A study on CMOS for Molybdenum Disulfide Thin Film Transistors

〇Masamichi Tsuchida1, Xu Chenghao1, Kousaku Shimizu1 (1.Nihon Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-S102-8]High-frequency oscillation by negative differential resistance in p+-MoS2/h-BN/p+-MoS2 tunnel junctions

〇Mika Ito1, Kei Kinoshita1, Rai Moriya1, Arisa Nishimura1, Momoko Onodera1, Kenji Watanabe2, Takashi Taniguchi2, Takao Sasagawa3, Safumi Suzuki4, Tomoki Machida1 (1.IIS Univ. Tokyo, 2.NIMS, 3.MSL Science Tokyo, 4.FIRST Science Tokyo)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[10a-S102-9]Reduction of Ti/p-type-WS2 contact resistance

〇Koki Fukuda1, Kaede Teraoka1, Jaehyo Jang1, Soma Ito1, Naoki Matsunaga1, Hitoshi Wakabayashi2 (1.Science Tokyo, 2.Science Tokyo IIR)
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