[10p-N203-1~10] 4.6 Terahertz Photonics

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)English Presentation

[10p-N203-8] Anisotropic Temperature Dependence of Carrier Transport in Beta-Gallium Oxide Epilayer Evaluated by Terahertz Time-Domain Spectroscopy

〇Shuang Liu¹, Verdad C. Agulto¹, Kosaku Kato¹, Toshiyuki Iwamoto^1,2, Thanh Nhat Khoa Phan¹, Hisashi Murakami³, Yoshinao Kumagai³, Makoto Nakajima¹ (1.UOsaka ILE, 2.Nippo Prec., 3.TAT Appli. Chem.)

Keywords:

THz-TDS,B-Ga2O3,optical physics

In this study, we investigate the anisotropic terahertz response of β-Ga2O3 epitaxial layers along the a-axis [100] and b-axis [010] directions using THz-TDS. The measurements were conducted over a frequency range of 0.2-3 THz and a temperature range of 90-400 K. By fitting the experimental spectra with the Drude–Lorentz model, we quantitatively extracted key anisotropic transport parameters. These results offer fundamental insights into the direction-dependent carrier dynamics of β-Ga2O3 and provide valuable theoretical guidance for its integration into high-frequency electronic and optoelectronic devices.