講演情報
[10p-N203-8]Anisotropic Temperature Dependence of Carrier Transport in Beta-Gallium Oxide Epilayer Evaluated by Terahertz Time-Domain Spectroscopy
〇Shuang Liu1, Verdad C. Agulto1, Kosaku Kato1, Toshiyuki Iwamoto1,2, Thanh Nhat Khoa Phan1, Hisashi Murakami3, Yoshinao Kumagai3, Makoto Nakajima1 (1.UOsaka ILE, 2.Nippo Prec., 3.TAT Appli. Chem.)
キーワード：
THz-TDS、B-Ga2O3、optical physics
In this study, we investigate the anisotropic terahertz response of β-Ga2O3 epitaxial layers along the a-axis [100] and b-axis [010] directions using THz-TDS. The measurements were conducted over a frequency range of 0.2-3 THz and a temperature range of 90-400 K. By fitting the experimental spectra with the Drude–Lorentz model, we quantitatively extracted key anisotropic transport parameters. These results offer fundamental insights into the direction-dependent carrier dynamics of β-Ga2O3 and provide valuable theoretical guidance for its integration into high-frequency electronic and optoelectronic devices.