[10p-N206-1~13] 6.3 Oxide electronics

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[10p-N206-12] Evaluation of MoO_x for DUV-LED contact layer using RF magnetron sputtering

〇Kazuto Shibata¹, Maki Kushimoto¹, Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.D Center Nagoya Univ., 4.IAR Nagoya Univ.)

Keywords:

oxide,UV-LED

This study evaluates MoO_x thin films as a p-type contact layer for AlGaN-based deep ultraviolet (DUV) LEDs, which suffer from low external quantum efficiency partly due to UV light absorption by conventional contact layers. MoO_x, with its high and tunable work function depending on its oxidation state, was deposited using RF magnetron sputtering under various conditions, including different input powers and oxygen gas flow. The electrical properties and composition were analyzed using I-V measurements and XPS. Low input power reduced sputter damage, resulting in lower resistance. Introducing oxygen increased resistance, attributed to changes in Mo valence states. These results suggest that controlling the valence state of MoO_x via deposition conditions can optimize it as a high-performance, UV-transparent p-type contact material for DUV LEDs.