[10p-N206-1~13] 6.3 Oxide electronics | The 86th JSAP Autumn Meeting 2025

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Session Details

Oral presentation6 Thin Films and Surfaces : 6.3 Oxide electronics

[10p-N206-1~13]6.3 Oxide electronics

Wed. Sep 10, 2025 1:30 PM - 5:00 PM JST
Wed. Sep 10, 2025 4:30 AM - 8:00 AM UTC

N206 (Lecture Hall North)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N206-1]Preparation of Epitaxial EuNiO₃ thin films towards high-speed proton diffusion phenomena.

〇(M1)Kenta Nakanishi¹, Hidekazu Tanaka^1,2, Haobo Li^1,2 (1.SANKEN, Univ. of Osaka, 2.OTRI, Univ. of Osaka)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N206-2]High-quality LiTi₂O₄ films grown by repeated temperature-modulation epitaxy

〇(M1)Shu Takashima¹, Takuto Soma¹, Kohei Yoshimatsu¹, Akira Ohtomo¹ (1.Science Tokyo)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N206-3]Photocatalytic Decomposition of Persistent Substance using ZnO Nanoparticles Annealed with Chitosan

〇Kotaro Kunimoto¹, Retsuo Kawakami¹, Shin-ichiro Yanagiya^1,2, Yoshitaka Nakano³, Masahito Niibe⁴ (1.Tokushima Univ., 2.pLED, Tokushima Univ., 3.Chubu Univ., 4.The Univ. Tokyo)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N206-4]Study of Crystal Facet-dependent Oxide Reaction of Photoanode by Scanning Electrochemical Cell Microscopy

〇Kaito Hirata^1,2, Kota Honda², Fumiaki Amano³, Takeshi Fukuma⁴, Yasufumi Takahashi^2,4 (1.NITech, 2.Nagoya Univ., 3.Tokyo Metropolitan Univ., 4.Kanazawa Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N206-5]Field Effect on Sensing Properties of MoO_x/Graphene Hybrid Field Effect Transistor Gas Sensor Devices

〇(M1)Otoya Okanishi¹, Akihiro Katsura¹, Yukiko Hirose¹, Naoka Nagamura², Takao Ono³, Takafumi Uemura⁴, Tohru Sugahara¹ (1.KIT, 2.NIMS, 3.UOsaka, 4.SANKEN)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-N206-6]Quantitative Evaluation of Surface Structures for Nanomaterial Applications via Topological Data Analysis

〇Nodoka Takatsuka¹, Yukiko Hirose¹, Emi Minamitani², Kazuto Akagi³, Tohru Sugahara^1,2 (1.Kyoto Inst. Tech., 2.SANKEN, 3.Tohoku Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[10p-N206-7]Research on the electrical characteristics of oxide semiconductor WO₃ nanoparticle using nanogap electrode for gas sensor applications

〇(M2)Ryo Fujioka¹, Sanae Murayama², Yuki Komoto², Sankar Ganesh Ramaraj¹, Hiroyasu Yamahara¹, Masateru Taniguchi², Hitoshi Tabata¹ (1.Univ. of Tokyo, 2.Sanken, Osaka Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-N206-8]Effect of solute adsorption on surface energy level of valence band maximum of α-Fe₂O₃ particles dispersed in aqueous solution
:an approach using photoemission yield spectroscopy in air.

〇Mariko Kinoshita¹, Sayaka Yanagida¹, Shoichi Somekawa¹ (1.TIRI)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-N206-9]Correlation between oxygen vacancies generated in titanium oxide thin films by annealing in a hydrogen atmosphere and their photocatalytic performance

〇Kodai Moriyama¹, Sota Tamura¹, Ryuhei Tanaka¹, Tsuyoshi Ochiai², Tomoyuki Tamura¹, Mitsuhiro Honda¹ (1.Nagoya Institute of Technology, 2.KISTEC)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

The 86th JSAP Autumn Meeting 2025

Session Details

[10p-N206-1~13]6.3 Oxide electronics

[10p-N206-1]Preparation of Epitaxial EuNiO₃ thin films towards high-speed proton diffusion phenomena.

[10p-N206-2]High-quality LiTi₂O₄ films grown by repeated temperature-modulation epitaxy

[10p-N206-3]Photocatalytic Decomposition of Persistent Substance using ZnO Nanoparticles Annealed with Chitosan

[10p-N206-4]Study of Crystal Facet-dependent Oxide Reaction of Photoanode by Scanning Electrochemical Cell Microscopy

[10p-N206-5]Field Effect on Sensing Properties of MoO_x/Graphene Hybrid Field Effect Transistor Gas Sensor Devices

[10p-N206-6]Quantitative Evaluation of Surface Structures for Nanomaterial Applications via Topological Data Analysis

[10p-N206-7]Research on the electrical characteristics of oxide semiconductor WO₃ nanoparticle using nanogap electrode for gas sensor applications

[10p-N206-8]Effect of solute adsorption on surface energy level of valence band maximum of α-Fe₂O₃ particles dispersed in aqueous solution
:an approach using photoemission yield spectroscopy in air.

[10p-N206-9]Correlation between oxygen vacancies generated in titanium oxide thin films by annealing in a hydrogen atmosphere and their photocatalytic performance

[10p-N206-10]Facile formation of two-phase domains in a single crystalline Li_7-xTi₅O₁₂particle

[10p-N206-11]On Ion Sensor Performance of Oxide Semiconductor Nanostructure/NiO Heterojunction

[10p-N206-12]Evaluation of MoO_x for DUV-LED contact layer using RF magnetron sputtering

[10p-N206-13]The evaluation of physical properties of MgO-TiN solid solution thin film prepared by PLD

Session Details

[10p-N206-1~13]6.3 Oxide electronics

[10p-N206-1]Preparation of Epitaxial EuNiO3 thin films towards high-speed proton diffusion phenomena.

[10p-N206-2]High-quality LiTi2O4 films grown by repeated temperature-modulation epitaxy

[10p-N206-3]Photocatalytic Decomposition of Persistent Substance using ZnO Nanoparticles Annealed with Chitosan

[10p-N206-4]Study of Crystal Facet-dependent Oxide Reaction of Photoanode by Scanning Electrochemical Cell Microscopy

[10p-N206-5]Field Effect on Sensing Properties of MoOx/Graphene Hybrid Field Effect Transistor Gas Sensor Devices

[10p-N206-6]Quantitative Evaluation of Surface Structures for Nanomaterial Applications via Topological Data Analysis

[10p-N206-7]Research on the electrical characteristics of oxide semiconductor WO3 nanoparticle using nanogap electrode for gas sensor applications

[10p-N206-8]Effect of solute adsorption on surface energy level of valence band maximum of α-Fe2O3 particles dispersed in aqueous solution:an approach using photoemission yield spectroscopy in air.

[10p-N206-9]Correlation between oxygen vacancies generated in titanium oxide thin films by annealing in a hydrogen atmosphere and their photocatalytic performance

[10p-N206-10]Facile formation of two-phase domains in a single crystalline Li7-xTi5O12 particle

[10p-N206-11]On Ion Sensor Performance of Oxide Semiconductor Nanostructure/NiO Heterojunction

[10p-N206-12]Evaluation of MoOx for DUV-LED contact layer using RF magnetron sputtering

[10p-N206-13]The evaluation of physical properties of MgO-TiN solid solution thin film prepared by PLD

[10p-N206-1]Preparation of Epitaxial EuNiO₃ thin films towards high-speed proton diffusion phenomena.

[10p-N206-2]High-quality LiTi₂O₄ films grown by repeated temperature-modulation epitaxy

[10p-N206-5]Field Effect on Sensing Properties of MoO_x/Graphene Hybrid Field Effect Transistor Gas Sensor Devices

[10p-N206-7]Research on the electrical characteristics of oxide semiconductor WO₃ nanoparticle using nanogap electrode for gas sensor applications

[10p-N206-8]Effect of solute adsorption on surface energy level of valence band maximum of α-Fe₂O₃ particles dispersed in aqueous solution
:an approach using photoemission yield spectroscopy in air.

[10p-N206-10]Facile formation of two-phase domains in a single crystalline Li_7-xTi₅O₁₂particle

[10p-N206-12]Evaluation of MoO_x for DUV-LED contact layer using RF magnetron sputtering