[10p-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-N302-5] Design and performance of single-ended SRAM cells for near energy-minimum-point operation

〇Tadakatsu Yaguchi¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Inst. of Sci. Tokyo)

Keywords:

SRAM,near energy-minimum-point operation,single-ended read