[10p-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies | The 86th JSAP Autumn Meeting 2025

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Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[10p-N302-1~11]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Wed. Sep 10, 2025 1:30 PM - 4:30 PM JST
Wed. Sep 10, 2025 4:30 AM - 7:30 AM UTC

N302 (Lecture Hall North)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[10p-N302-1]Optimized design of embedded flash memory using standard logic transistors

〇HIROSHIGE HIRANO¹, ATSUSHI NOMA¹, HIROAKI KURIYAMA¹ (1.Tower Partners Semiconductor)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[10p-N302-2]Design of asymmetric SRAM cell for energy-minimum-point operation

〇Ryo Fujishita¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Inst. of Sci. Tokyo)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-N302-3]A high-noise-immunity SRAM cell for energy-minimum-point-operation PIMs

Katsutoshi Ito¹, 〇Takuma Fujiwara¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Inst. of Sci. Tokyo)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-N302-4]A parallel-processing-in-memory BNN accelerator macro using XNOR-SRAM

〇Kein Kondo¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Inst. of Sci. Tokyo)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-N302-5]Design and performance of single-ended SRAM cells for near energy-minimum-point operation

〇Tadakatsu Yaguchi¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Inst. of Sci. Tokyo)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-N302-6]Design methodology for a radiation-hardened SRAM cell

〇Toshiki Nomiyama¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Inst. of Sci. Tokyo)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[10p-N302-7]Evaluation of hard mask transfer etching of HP19 nm L/S patterns in nanoimprint lithography

〇Kenta Suzuki¹, Tetsuya Ueda¹, Yuji Kasashima¹, Hamamoto Ryosuke¹, Masanaga Fukasawa¹, Wataru Mizubayashi¹, Yoshihiro Hayashi¹, Masaki Ishida², Tomomi Funayoshi², Hiromi Hiura², Masayuki Kagawa², Noriyasu Hasegawa², Kiyohito Yamamoto² (1.SFRC, AIST, 2.Canon)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-N302-8]Evaluation of dual damascene patterning by nanoimprint lithography

〇Ryosuke Hamamoto¹, Kenta Suzuki¹, Tetsuya Ueda¹, Yoshihiro Hayashi¹, Wataru Mizubayashi¹, Masaki Ishida², Hiromi Hiura², Masayuki Kagawa², Atushi Kusaka², Makoto Ogusu², Kiyohito Yamamoto² (1.AIST SFRC, 2.Canon)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-N302-9]Atomistic Simulation of Increase in Resistance of Oxidized CuAl₂ Films

〇Takahisa Tanaka¹ (1.Keio Univ.)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-N302-10]Fabrication of CoSn kagome metal thin films for interconnect applications

〇Tomoya Nakatani¹, Nattamon Suwannaharn¹, Taisuke Sasaki¹ (1.NIMS)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N302-11]Electromigration characteristics of NiAl

〇Shuhei Yonehara¹, Junichi Koike¹ (1.Tohoku Univ.)

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