[10p-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-N302-6] Design methodology for a radiation-hardened SRAM cell

〇Toshiki Nomiyama¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Inst. of Sci. Tokyo)

Keywords:

SRAM,soft error