Presentation Information

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N322-5]Investigation of conditions of 4H-SiC closed sublimation growth to reduce BPD density

〇(M1)Aoto Hashiguchi¹, Takuma Ban¹, Naoki Takahashi¹, Satoshi Kamiyama¹, Tetuya Takeuti¹, Motoaki iwaya¹, Atushi Suzuki², Eri Akazawa², Weifang Lu³ (1.Meijo Univ., 2.E&E Evolution, 3.Xiamen Univ.)

Keywords:

semiconductor

Boron and nitrogen co-doped 4H-SiC exhibits a broad emission spectrum due to donor-acceptor pair (DAP) luminescence. In this study, we investigated the reduction of basal plane dislocations (BPDs), which significantly affect the luminescence efficiency. Specifically, we examined the effect of varying two growth parameters—growth temperature and growth pressure—on BPD suppression. The optimization of these parameters is based on the premise that maintaining step-flow growth improves the surface morphology, which in turn contributes to the suppression of BPDs.

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