Session Details
[10p-N322-1~13]15.6 Group IV Compound Semiconductors (SiC)
Wed. Sep 10, 2025 1:30 PM - 5:00 PM JST
Wed. Sep 10, 2025 4:30 AM - 8:00 AM UTC
Wed. Sep 10, 2025 4:30 AM - 8:00 AM UTC
N322 (Lecture Hall North)
[10p-N322-1]Temperature dependence of electron and hole drift velocities under high electric field in 4H-SiC
〇Daichi Fujioka1, Ryoya Ishikawa1, Kyota Mikami1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
[10p-N322-2]Detection of Si-related defect levels with close energy positions in electron-irradiated SiC
〇(M1)Kotaro Yamanaka1, Kyota Mikami1, Tsunenobu Kimoto1, Mitsuaki Kaneko1 (1.Kyoto Univ.)
[10p-N322-3]Distribution of nitrogen dopant in 4H-SiC investigated by a Laser Heterodyne Photothermal Displacement Method
〇Kouyou Harada1, Masashi Kato2, Atsuhiko Fukuyama1 (1.Univ. of Miyazaki, 2.Nagoya Inst. of Tech.)
[10p-N322-4]Control of gas supply for reduction of ND-NA in closed sublimation growth of fluorescent 4H-SiC
〇Takuma Ban1, Aoto Hashiguchi1, Naoki Takahashi1, Eri Akazawa2, Atsushi Suzuki2, Weifang Lu3, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.E&E evolution Ltd., 3.Xiamen Univ.)
[10p-N322-5]Investigation of conditions of 4H-SiC closed sublimation growth to reduce BPD density
〇(M1)Aoto Hashiguchi1, Takuma Ban1, Naoki Takahashi1, Satoshi Kamiyama1, Tetuya Takeuti1, Motoaki iwaya1, Atushi Suzuki2, Eri Akazawa2, Weifang Lu3 (1.Meijo Univ., 2.E&E Evolution, 3.Xiamen Univ.)
[10p-N322-6]Study on the Internal Quantum Efficiency Measurement and LED Device Fabrication of Fluorescent 4H-SiC
〇(M2)Naoki Takahashi1, Takuma Ban1, Aoto Hashiguchi1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Atsushi Suzuki2, Eri Akazawa2, Yiyu Ou3, Haiyan Ou3 (1.Meijo Univ., 2.E&E Evolution Corp, 3.Technical Univ.Denmark)
[10p-N322-7]Effects of Ammonia Treatment on formation of SiC Coating on Fe Substrates by Thermal CVD Using Vinylsilane
〇(M2)Naoto Ohshima1, Yuki Tsuchizu2, Satoru Kaneko3, Kenichi Uehara4, Shigeo Yasuhara4, Noriyuki Taoka1, Keishiro Goshima1, Wakana Takeuchi1 (1.Aichi Inst. Tech., 2.Tohoku Univ., 3.KISTEC, 4.JAC)
[10p-N322-8]Effects of Al Incorporation on the Electrical Properties of Amorphous AlSiC Thin Films Grown by Vinylsilane and Trimethylaluminum
〇(D)Yuuki Tsuchiizu1, Uehara Kenichi2, Ohori Daisuke1, Yasuhara Shigeo2, Endo Kazuhiko1, Takeuchi Wakana3 (1.Inst. of Fluid Science Tohoku Univ., 2.Japan Advanced Chemicals Ltd., 3.Aichi Inst. of Tech.)
[10p-N322-9]Comparison of single Shockley-type stacking fault expansion in 4H-SiC under ultraviolet illumination after fluorine or oxygen ion implantation
〇Johji Nishio1, Chiharu Ota1, Ryosuke Iijima1 (1.Toshiba Corporate Lab.)
[10p-N322-10]Origin Analysis of Stacking Fault Complex with Different Surface Morphology in 4H-SiC Epitaxial Wafer
〇SHOHEI HAYASHI1, Junji Senzaki2 (1.Toray Research Center, 2.AIST)
[10p-N322-11]Characterization of 3C-SiC thick epitaxial layers grown on off-axis 4H-SiC substrate
〇Jun Fujita1, Kongsihk Rho1, Masashi Kato1 (1.NITech)
[10p-N322-12]High-Resolution Synchrotron X-ray Topography of 4H-SiC Wafers Using a Wide-Field Detector at SPring-8 BL16B2
〇(M1)Yuhui Huang1, Rui Zhou1, Kentaro Kajiwara2, Takashi Kameshima2,3, Taito Osaka3, Makina Yabashi3, Takayoshi Shimura1,3 (1.Waseda Univ., 2.JASRI, 3.RIKEN)
[10p-N322-13]Defect characterization in SiC wafers by multimodal analysis using perspective transformation
〇Shunta Harada1,2, Takahashi Kosei1, Kota Tsujimori2, Juheyong Sun1, Michio Kawase1, Yasutaka Matsubara1, Keisuke Seo1, Tatsuki Kodera1, Kenta Shimamoto3, Seiya Mizutani4, Yuya MIzutani4, Seiji Mizutani4, Kenta Murayama4 (1.Nagoya Univ., 2.SSR, 3.Rigaku, 4.Mipox)