[10p-N322-1~13] 15.6 Group IV Compound Semiconductors (SiC)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N322-6] Study on the Internal Quantum Efficiency Measurement and LED Device Fabrication of Fluorescent 4H-SiC

〇(M2)Naoki Takahashi¹, Takuma Ban¹, Aoto Hashiguchi¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Atsushi Suzuki², Eri Akazawa², Yiyu Ou³, Haiyan Ou³ (1.Meijo Univ., 2.E&E Evolution Corp, 3.Technical Univ.Denmark)

Keywords:

semiconductor

When boron (B) and nitrogen (N) are doped into silicon carbide (SiC), the material exhibits photoluminescence and is referred to as fluorescent SiC, emitting light at a wavelength of approximately 580 nm. Furthermore, by applying an anodic etching process to the crystal surface, a porous layer is formed, resulting in shorter-wavelength emission around 460 nm. The combination of fluorescent and porous fluorescent SiC is expected to realize high color rendering white LEDs with a broad emission spectrum. In this study, we established a method for measuring the internal quantum efficiency (IQE) of fluorescent 4H-SiC and fabricated a hybrid LED device incorporating an excitation LED.