[10p-N324-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-N324-11] Electronic properties and dissociation channels of CF₃OCF₃ molecule

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:

CF3OCF3,Etching gas,Primarily dissociation process

In this stage, we propose the CF₃OCF₃ and CF₃OC₂F₅ as the candidates, because CF₃OCF₃ dissociates to CF₃⁺ + COF₂ + F in the ionization process and also to CF₃ + COF₂ + F in the excitation process, and CF₃OC₂F₅ dissociates to CF₃⁺ + OC₂F₅ in the ionization process and 2CF₃ + F₂CO in the excitation process. These fragmented species have high reactivity and may be useful as the etchants.