[10p-N324-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment | The 86th JSAP Autumn Meeting 2025

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Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[10p-N324-1~12]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 10, 2025 1:30 PM - 4:45 PM JST
Wed. Sep 10, 2025 4:30 AM - 7:45 AM UTC

N324 (Lecture Hall North)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[10p-N324-1]Anisotropic Cyclic Etching of Platinum Films using Oxygen Plasma and Formic Acid Vapor Treatment

〇Kazuhiro Miwa¹, T. T. Nga Nguyen¹, Daijiro Akagi², Masaru Hori¹, Kenji Ishikawa¹ (1.Nagoya Univ., 2.AGC Inc.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-2]Reactivity of Fluorinated GaN Surface in Electron-Beam-Assisted Atomic Layer Etching

〇(M1)Daito Shimazu¹, Shunya Hirai¹, Takayoshi Tsutsumi², Makoto Sekine², Kenichi Inoue², Kenji Ishikawa² (1.Nagoya Univ. Eng, 2.Nagoya Univ. cLPS)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-3]Etching characteristics of GaN in CH₄ plasma

〇(M1)Shuto kudo¹, Kazuo takahasi¹ (1.Kyoto Inst.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-4]Precise Control of Diamond Trench Profile Using Plasma Etching

〇Takuto Oya¹, Trung Nguyen Tran², Thi-Thuy-Nga Nguyen², Kenichi Inoue², Takayoshi Tsutsumi², Kenji Ishikawa² (1.Nagoya Univ., 2.Nagoya Univ. cLPS)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-5]Improvement of Etching Rate for Two-step Process of TiN

〇Yudai Mashiko¹, Taku Iwase¹, Makoto Satake¹, Yasushi Sonoda², Motohiro Tanaka², Naoyuki Kofuji², Kenji Maeda² (1.Hitachi Ltd., R&D Group, 2.Hitachi High-Tech Corp.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-6]Evaluation of W etching by energetic iodine ion

〇Takuma Yanagisawa¹, Hojun Kang¹, Song-Yun Kang², Dongkyu Lee², Yuna Lee², Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Samsung Electronics)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-7]Effect of Gas-Phase Radical Composition Ratio on CF_x Sticking Probability

〇(M2)Takumi Kurushima¹, Takayoshi Tsutsumi², Makoto Sekine², Kenichi Inoue², Kenji Ishikawa² (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-N324-8]Protection layer for plasma-CVD SiO₂ film against low-temperature HF gas etching.

〇TSUBASA IMAMURA¹, Masaki Yamada¹ (1.Hitachi R&D)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-N324-9]Investigation of the Influence of Depth Dependence of Radical Species in Sidewall Protection during Si Etching

〇Shuto Tsuchioka¹, Kenichi Inoue², Takayoshi Tsutsumi², Makoto Sekine², Kenji Ishikawa² (1.Nagoya Uni., 2.cLPS)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-N324-10]Elucidation of primary dissociation mechanisms of hydrofluorocarbons based on photoelectron-photoion coincidence (PEPICO) measurements

Trung Nguyen Tran¹, Hiroshi Iwayama², Toshio Hayashi¹, Kenichi Inoue¹, Takayoshi Tsutsumi¹, 〇Kenji Ishikawa¹ (1.Nagoya Univ., 2.IMS)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-N324-11]Electronic properties and dissociation channels of CF₃OCF₃molecule

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[10p-N324-12]Electronic properties and dissociation channels of CF₃OC₂F₅molecule