The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[10p-N324-1~12]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 10, 2025 1:30 PM - 4:45 PM JST
Wed. Sep 10, 2025 4:30 AM - 7:45 AM UTC
N324 (Lecture Hall North)
Keigo Takeda(Meijo Univ.), Toshiyuki Sasaki(Kioxia)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[10p-N324-1]Anisotropic Cyclic Etching of Platinum Films using Oxygen Plasma and Formic Acid Vapor Treatment

〇Kazuhiro Miwa1, T. T. Nga Nguyen1, Daijiro Akagi2, Masaru Hori1, Kenji Ishikawa1 (1.Nagoya Univ., 2.AGC Inc.)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-2]Reactivity of Fluorinated GaN Surface in Electron-Beam-Assisted Atomic Layer Etching

〇(M1)Daito Shimazu1, Shunya Hirai1, Takayoshi Tsutsumi2, Makoto Sekine2, Kenichi Inoue2, Kenji Ishikawa2 (1.Nagoya Univ. Eng, 2.Nagoya Univ. cLPS)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-3]Etching characteristics of GaN in CH4 plasma

〇(M1)Shuto kudo1, Kazuo takahasi1 (1.Kyoto Inst.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-4]Precise Control of Diamond Trench Profile Using Plasma Etching

〇Takuto Oya1, Trung Nguyen Tran2, Thi-Thuy-Nga Nguyen2, Kenichi Inoue2, Takayoshi Tsutsumi2, Kenji Ishikawa2 (1.Nagoya Univ., 2.Nagoya Univ. cLPS)
Comment()
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-5]Improvement of Etching Rate for Two-step Process of TiN

〇Yudai Mashiko1, Taku Iwase1, Makoto Satake1, Yasushi Sonoda2, Motohiro Tanaka2, Naoyuki Kofuji2, Kenji Maeda2 (1.Hitachi Ltd., R&D Group, 2.Hitachi High-Tech Corp.)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-6]Evaluation of W etching by energetic iodine ion

〇Takuma Yanagisawa1, Hojun Kang1, Song-Yun Kang2, Dongkyu Lee2, Yuna Lee2, Kazuhiro Karahashi1, Satoshi Hamaguchi1 (1.Osaka Univ., 2.Samsung Electronics)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N324-7]Effect of Gas-Phase Radical Composition Ratio on CFx Sticking Probability

〇(M2)Takumi Kurushima1, Takayoshi Tsutsumi2, Makoto Sekine2, Kenichi Inoue2, Kenji Ishikawa2 (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-N324-8]Protection layer for plasma-CVD SiO2 film against low-temperature HF gas etching.

〇TSUBASA IMAMURA1, Masaki Yamada1 (1.Hitachi R&D)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-N324-9]Investigation of the Influence of Depth Dependence of Radical Species in Sidewall Protection during Si Etching

〇Shuto Tsuchioka1, Kenichi Inoue2, Takayoshi Tsutsumi2, Makoto Sekine2, Kenji Ishikawa2 (1.Nagoya Uni., 2.cLPS)
Comment()
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-N324-10]Elucidation of primary dissociation mechanisms of hydrofluorocarbons based on photoelectron-photoion coincidence (PEPICO) measurements

Trung Nguyen Tran1, Hiroshi Iwayama2, Toshio Hayashi1, Kenichi Inoue1, Takayoshi Tsutsumi1, 〇Kenji Ishikawa1 (1.Nagoya Univ., 2.IMS)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-N324-11]Electronic properties and dissociation channels of CF3OCF3 molecule

〇Toshio Hayashi1, Kenji Ishikawa1, Makoto Sekine1, Masaru Hori1 (1.Nagoya Univ.)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[10p-N324-12]Electronic properties and dissociation channels of CF3OC2F5 molecule

〇Toshio Hayashi1, Kenji Ishikawa1, Makoto Sekine1, Masaru Hori1 (1.Nagoya Univ.)
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