[10p-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-N402-3] C-band Quantum Dot Lasers Grown Using All-Arsenic Materials

〇JINKWAN KWOEN¹, Jihye Jung¹, Masahiro Kakuda¹, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. Tokyo)

Keywords:

quantum dot,laser,molecular beam epitaxy

Quantum dot (QD) lasers grown on InP substrates are attracting attention as highly promising light sources for ultra-high-speed optical transceivers exceeding 10 Tbps. Their excellent thermal stability in the long-wavelength region, low power consumption, and resistance to optical feedback make them ideal for next-generation optical communication systems. However, achieving precise wavelength control and structural stability in multilayer stacked structures presents challenges such as strain accumulation and group-V intermixing. To address these issues, a novel growth technique has been proposed that introduces a partial capping layer with low indium composition on InP substrates. In this study, we report the realization of a C-band quantum dot laser grown entirely with arsenide-based materials using this approach.