[10p-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy | The 86th JSAP Autumn Meeting 2025

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Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[10p-N402-1~11]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 10, 2025 1:30 PM - 4:30 PM JST
Wed. Sep 10, 2025 4:30 AM - 7:30 AM UTC

N402 (Lecture Hall North)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[10p-N402-1]Substrate temperature measurement method for MBE equipment using thermography

〇Satoshi Shimomura¹, Riku Eguchi¹, Hiroto Imai¹, Zhi-Run Li¹ (1.Ehime Univ.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[10p-N402-2]Transition selective Photoluminescence of InSb quantum dots on GaSb substrate

〇Shinichirou Gozu¹, Taiga Kitoh², Emin Kuwabara², Kyosuke Yamamoto², Satoshi Endoh², Hiroki Fujishiro² (1.AIST, 2.TUS)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-N402-3]C-band Quantum Dot Lasers Grown Using All-Arsenic Materials

〇JINKWAN KWOEN¹, Jihye Jung¹, Masahiro Kakuda¹, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. Tokyo)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-N402-4]Dependence of threshold current characteristics on p-type doping concentration in co-doped InAs/GaAs quantum dot lasers

〇Masahiro Kakuda¹, Jinkwan Kwoen¹, Yasuhiko Arakawa¹ (1.UTokyo)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N402-5]Formation of above-barrier states in GaAs layer caused by lattice mismatched strain by growth of InAs quantum dots

〇Takato Suzuki¹, Osamu Kojima¹, Toshiyuki Kaizu², Osamu Wada³, Takashi Kita³ (1.Chiba Inst. Tech., 2.Univ. of Electro-Commun., 3.Kobe Univ)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-N402-6]Height distribution analysis of InAs quantum dots grown on GaAs layer by cumulative distribution function

〇Haruto Okuizumi¹, Ronel Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N402-7]Effect of low- temperature initial layer on strain relaxation in GaAs/Si

〇Shota Hayakawa¹, Yuito Yasukochi¹, Nobuaki Kojima¹ (1.Toyota Tech. Inst.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-N402-8]Effects of surface reconstructions on the photoluminescence properties of buried InGaAs/GaAs quantum well after air exposure

Zhao Ma^1,2, 〇Takaaki Mano¹, Akihiro Ohtake¹, Takashi Kuroda^1,2 (1.NIMS, 2.Kyushu Univ.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-N402-9]Polarity Control in GaAs/Ge/GaAs{111} Heterostructures

〇Akihiro Ohtake¹, Yusuke Hayashi¹, Takaaki Mano¹ (1.NIMS)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-N402-10]A theoretical explanation of misorientation-direction-dependent backward diffusion of Zn in (100) InP during metalorganic vapor-phase epitaxy

〇Kazuhiro Mochizuki¹, Hiroshi Ohta¹, Tomoyoshi Mishima¹, Fumimasa Horikiri¹, Tomoaki Nishimura¹ (1.Hosei Univ.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-N402-11]Generation of optical nonlinear effect in a In_0.05Ga_0.95As/GaAs multiple quantum well

〇Koudai Aoyama¹, Osamu Kojima¹, Tomoya Inoue², Takasi Kita² (1.Chiba Inst. Tech., 2.Kobe Univ.)

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