Presentation Information
[10p-N403-2]Effect of Organic Ligand and Metal Core structure on Lithographic Characteristics of Organic-Inorganic Hybrid Resists for EB and EUV Lithography
〇Hiroki Yamamoto1, Yusa Muroya2, Kazumasa Okamoto2, Shuhei Shimoda3, Takahiro Kozawa2 (1.QST, 2.SANKEN Osaka Univ., 3.Hokkaido Univ.)
Keywords:
resist material,EUV lithography,Organic-inorganic hybrid resist
In the realization of further miniaturization of patterning feature sizes less than 10 nm in semiconductor devices, it is essential to get the new resist design strategy such as inorganic-organic hybrid resist materials for ionizing radiation to clarify the effect of organic ligand and metal nanocluster core structure on resist performances. In this study, the inorganic-organic hybrid resist materials known as metal-oxo clusters with four kinds of organic ligands and three kinds of metal nanocluster core were synthesized and their resist performances such as resolution and sensitivity were examined upon exposed to EUV and EB.
We successfully synthesized inorganic-organic resist materials with tiglic acid and angelic acid, which are used as new organic ligands and examined their resist performance. Our results indicated that the sensitivity in metal oxo clusters with tiglic acid was higher than those of metal oxo clusters with other organic ligands in EB. Although the exposure dose was not optimized, the pattern of Zr-based oxo clusters with tiglic acid showed 20 nm line and space patterns. Metal oxo clusters resists have the potential as future negative tone resist materials for EB and EUV lithography.
We successfully synthesized inorganic-organic resist materials with tiglic acid and angelic acid, which are used as new organic ligands and examined their resist performance. Our results indicated that the sensitivity in metal oxo clusters with tiglic acid was higher than those of metal oxo clusters with other organic ligands in EB. Although the exposure dose was not optimized, the pattern of Zr-based oxo clusters with tiglic acid showed 20 nm line and space patterns. Metal oxo clusters resists have the potential as future negative tone resist materials for EB and EUV lithography.