Presentation Information

[10p-S201-7]Depth analysis of perovskite film using cryo-GCIB-TOF-SIMS

〇Chizuru Asahara1, Takahiko Ikarashi1, Tomohiro Sakata1, Hiroko Futamura1, Shin Inamoto1, Tomoya Nakamura2, Minh Anh Truong2, Noboru Ohashi2, Atsushi Wakamiya2 (1.TRC, 2.Kyoto Univ.)

Keywords:

Perovskite solar cells,TOF-SIMS,analysis

In this study, time-of-flight secondary ion mass spectrometry (TOF-SIMS) using a gas cluster ion beam (GCIB) was performed under sample cooling for depth analysis of perovskite films. Although damage to the perovskite film induced by ion beam irradiation was an issue, sample cooling suppressed the analytical damage and made it possible to perform precise depth profiling.