Presentation Information
[7a-N105-5]Low-temperature thermal conductivity of heavily doped Silicon measured using 3ω method
〇(M1)Kazuki Watanabe1, Keito Yoshinaga1, Ryo Toyoshima1, Ken Uchida1 (1.The University of Tokyo)
Keywords:
semiconductor,thermal conductivity,low temperature
Despite the fact that CMOS operation at low temperatures is being considered to reduce the increasing power consumption in data centers, the thermal conductivity of bulk Si with high impurity concentration at the 1018 cm-3 level used in bulk CMOS integrated circuits has rarely been investigated at low temperatures. In this study, we measured the thermal conductivity of p-type Si substrates with high impurity concentration using the 3ω method, eliminating the factor that makes the measurement difficult at low temperatures by using Si substrates with a thick oxide film.