Presentation Information
[7a-N202-3]Epitaxial Film Growth of LaNiO3 on Zirconia-Buffered Si Substrate and Their Hydrogen-Induced Thermal Switching Properties
〇Haruka Zaizen1, Hidekazu Tanaka1,2, Haobo Li1,2, Hiromichi Ohta3, Ahrong Jeong3, Osamu Nakagawara4 (1.SANKEN, The Univ. of Osaka, 2.OTRI, 3.RIES, Univ. of Hokkaido, 4.I-PEX Piezo Solutions Inc)
Keywords:
LaNiO3,Silicon substrate,Pulsed Laser Deposition
The synthesis and integration of high-quality epitaxial functional oxides on wafer-scale Si substrates is a critical technology for advancing oxide electronics as the next generation of semiconductor-based industries. In this presentation, we report the successful epitaxial growth of a representative perovskite oxide, LaNiO3 on a wafer-compatible Si substrate. LaNiO3 is a conductive oxide with a wide range of functional properties, including excellent metallic conduction. The LaNiO3 thin film was deposited on a KRYSTAL® Si wafer provided by I-PEX Inc. This approach enabled high-quality crystalline growth of LaNiO3 directly on the Si wafer. Furthermore, the LaNiO3 thin films were subjected to hydrogenation treatment, and we successfully observed a switchable thermal conductivity behavior induced by hydrogen incorporation.