Presentation Information

[7a-N202-5]Study on current component analysis at Ti0.3Zn0.7O1.3/Si interface for tunnel FETs

〇(M2)Kenta Ogawa1,2, Toyohiro Chikyow2, Atsushi Ogura1,3, Takahiro Nagata2,1 (1.Meiji Univ., 2.NIMS, 3.MREL)

Keywords:

Tunnel FETs,Oxide semiconductor,Thin film material evaluation