Presentation Information
[7a-N202-5]Study on current component analysis at Ti0.3Zn0.7O1.3/Si interface for tunnel FETs
〇(M2)Kenta Ogawa1,2, Toyohiro Chikyow2, Atsushi Ogura1,3, Takahiro Nagata2,1 (1.Meiji Univ., 2.NIMS, 3.MREL)
Keywords:
Tunnel FETs,Oxide semiconductor,Thin film material evaluation