Presentation Information
[7a-N202-6]Effect of H2 Gas Addition on Sputter Epitaxy of Fe-Doped Indium Tin Oxide Films
〇Takumi Kado1, Toshihiro Nakamura1,2 (1.Kyoto Univ., 2.ILAS, Kyoto Univ.)
Keywords:
transparent conductive film,diluted magnetic semiconductor,RF magnetron sputtering
Oxide-based diluted magnetic semiconductors have attracted much attention. We have focused on transition metal-doped indium tin oxide (ITO) films. In this work, we investigated the effect of H2 gas addition on sputter epitaxy of Fe-doped ITO films. Fe-doped ITO films were deposited on single-crystal yttria-stabilized zirconia substrates by radio-frequency magnetron sputtering using a H2-Ar gas mixture. The epitaxial growth of the films in a H2-Ar gas mixture was confirmed by x-ray diffraction. The transport properties such as carrier concentration, electron mobility, and resistivity were dependent on the H2 gas addition conditions. According to UV-VIS spectroscopic measurements, the optical bandgap was affected by the H2 gas addition. Room-temperature ferromagnetism was observed in the films deposited in a H2-Ar gas mixture. The results of this study provide useful insight into the application of Fe-doped ITO films to ferromagnetic electrodes in spintronic devices.