[7a-N304-1~8] 12.4 Organic light-emitting devices and organic transistors

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N304-7] Rational Impurity Doping for Enhanced Hole Mobility in Silicon Quantum Dots for Light-Emitting Diodes

〇(PC)Hiroyuki Yamada¹, Naoto Shirahata^1,2,4, Tadaaki Nagao^1,3 (1.NIMS, 2.Hokkaido Univ. Chem., 3.Hokkaido Univ. Phys., 4.Chuo Univ. Phys.)

Keywords:

silicon quantum dots,light-emitting diodes,rational impurity doping

We report on the impact of impurity doping on device performance enhancement of silicon quantum dot (SiQD) light-emitting diode. The increase in hole mobility resulting from boron doping increases the external quantum efficiency of electroluminescence by a factor of 12 and the optical power density by a factor of 2.65.