[7a-N321-1~8] 3.8 Terahertz technologies

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7a-N321-4] Highly sensitive evaluation of thin carrier layers using s-wave Brewster effect in ATR THz spectroscopy

〇(DC)Minxia Gan¹, Hiroaki Hanafusa¹, Yutaka Kadoya¹ (1.Hiroshima Univ.)

Keywords:

Terahertz spectroscopic ellipsometry,free carrier transport,wide bandgap semiconductors

Wide bandgap semiconductors have attracted increasing attention in recent years; however, non-destructive evaluation of near-surface thin carrier layers, which affect device performance, remains a challenge. Terahertz time-domain spectroscopic ellipsometry (TDSE) is a promising method, but conventional approaches show low sensitivity for thin layers. In this study, we propose s-polarized attenuated total reflection TDSE to significantly improve the sensitivity. Experiments demonstrated approximately sevenfold sensitivity enhancement compared to conventional methods. Furthermore, it was shown that by combining with conventional TDSE, carrier density and mobility for the same conductivity can be discriminated using only the amplitude information.