Presentation Information
[7a-P03-2]Evaluation of surface flatness in BeZnTe layers grown on InP substrates
〇Eisuke Mogi1, Ichirou Nomura1 (1.Sophia Univ.)
Keywords:
II-VI compound semiconductor
Samples were fabricated on an InP substrate using the MBE method. Multiple samples with different Be compositions were prepared by changing the Be cell temperature during the BeZnTe layer growth. The fabricated samples were evaluated by SEM observation, XRD measurement, and AFM observation. The dependence of the RMS value obtained from AFM measurement and the degree of lattice mismatch of BeZnTe determined from XRD measurement on the Be cell temperature was investigated. It was shown that the sample was lattice-matched at a Be cell temperature of 994°C, while the RMS value was lowest and the surface was found to be more flat at a Be cell temperature of 1020°C.