Presentation Information
[7a-P05-32]Fabrication and Transport Characterization of Graphene Field-Effect Transistors on SiC
〇Tianchen Huang1, Banri Wada2, Kenji Watanabe3, Takashi Taniguchi3, Satoru Tanaka2, Akinobu Kanda1 (1.Univ. Tsukuba, 2.Kyushu Univ., 3.NIMS)
Keywords:
graphene,transistor,SiC
In this project, we aim to enhance the carrier mobility of graphene films grown by chemical vapor deposition (CVD) on SiC substrates by adapting techniques traditionally applied to mechanically exfoliated graphene. To suppress residual carrier density and improve device carrier mobility, hexagonal boron nitride (hBN) is employed as a gate-insulating layer, taking advantage of its atomically flat surface and excellent dielectric properties. To minimize the contact resistance between graphene and metal electrodes, we implement an edge-contact architecture in which electrodes are patterned to interface with the graphene from its side face rather than its top surface. This geometry promotes more intimate coupling between the two materials and thereby reduces the parasitic resistance that commonly limits device performance. Device patterning is achieved through maskless photolithography and high-resolution electron-beam lithography with a gate electrode width of 500 nm and an alignment accuracy of 150 nm.