Session Details
[7a-P05-1~80]17 Nanocarbon and Two-Dimensional Materials (Poster)
Sun. Sep 7, 2025 9:30 AM - 11:30 AM JST
Sun. Sep 7, 2025 12:30 AM - 2:30 AM UTC
Sun. Sep 7, 2025 12:30 AM - 2:30 AM UTC
P05 (Gymnasium)
[7a-P05-1]Investigation of Active Site in Platinum-Group High-Entropy Alloy Nanoparticles for Single-Walled Carbon Nanotube growth
〇Hinata Sakamoto1, Kamal Sharma1, Takahiro Saida1, Kohei Kusada2, Hiroshi Kitagawa2, Takahiro Maruyama1 (1.Meijo Univ., 2.Kyoto Univ.)
[7a-P05-2]Attempt of preparation of Pt catalyst particles in chirality-controlled growth of single-walled carbon nanotubes by using organic molecule precursors
〇Soma Mori1, Kamal Prasad Sharma2, Takahiro Saida1,2, Takahiro Maruyama1,2 (1.Meijo Univ., 2.Nanomaterial Res.)
[7a-P05-3]Optimization of Growth Condition of Single-Walled Carbon Nanotubes with Ruthenium Catalysts toward Narrow Chirality Distribution
〇(D)MANA SELVARAJ1 (1.Meijo Univ.)
[7a-P05-4]Optimization of N-type SWCNT Film Performance using Cationic Surfactants and Organic Solvents
〇(B)Asumi Eguchi1, Shuya Ochiai1, Masayuki Takashiri1 (1.Tokai Univ.)
[7a-P05-5]Performance evaluation of N-type doped SWCNT films with cationic surfactants
〇(M1)Shuya Ochiai1, Yutaro Okano1, Masayuki Takashiri1 (1.Grad. Sch. Eng., Tokai Univ.)
[7a-P05-6]Multi-channel single-CNT devices via kite growth for transport studies under environmental influences
〇Yuanjia Liu1, Taiki Inoue1, Yoshihiro Kobayashi1 (1.UOsaka)
[7a-P05-7]CO2 Sensing of Single-walled Carbon Nanotube and Zeolitic Imidazolate Framework Composites
〇(B)Teru Nakamura1, Naoki Tanaka2,3, Koshin Tanaka2, Masafumi Inaba4, Tsuyohiko Fujigaya2,3,5 (1.Fac. Eng., Kyushu Univ., 2.Grad. Sch. Eng., Kyushu Univ., 3.I2CNER, Kyushu Univ, 4.Grad. Sch. Inf. Sci. & Electr. Eng., Kyushu Univ., 5.Center for Molecular Systems, Kyushu Univ.)
[7a-P05-8]Performance improvement of “moisture-enabled electric generating paper” based on carbon-nanotube-composite paper by impregnation with sodium dodecyl sulfate solution
〇Hiyu Mitsumaki1, Yuma Morita2, Koya Arai2, Takahide Oya1,3 (1.Grad. School Eng. Sci., Yokohama National Univ, 2.Mitsubishi Materials, 3.IMS, Yokohama National Univ)
[7a-P05-9]Study on improving conversion efficiency of integrated type of dye-sensitized solar cell with H2/Ar annealing treatment
〇Chihiro Shimizu1, Takahide Oya1,2 (1.Grad. School Eng. Sci., Yokohama Nat'l Univ., 2.IMS, Yokohama Nat'l Univ.)
[7a-P05-10]Thermoelectric performance of gels based on carbon nanotube dispersion
〇(M1C)Nobuyasu Okubo1, Takahide Oya1,2 (1.Grad. School of Eng. Sci., YNU., 2.IMS, YNU.)
[7a-P05-11]Large-Area Development of Paper Dye-Sensitized Solar Cell Using CNT Composite Paper
〇Yi Kou1, Takahide Oya1,2 (1.Grad School Eng. Sci.,Yokohama National Univ., 2.IMS,Yokohama National Univ.)
[7a-P05-12]Examining p-n junction-type structure of transpiration-type thermoelectric power generation paper based on CNT-composite paper
〇Kazuhide Yakata1, Yuma Morita2, Koya Arai2, Takahide Oya1,3 (1.College of Eng. Sci., Yokohama National Univ.,, 2.Mitsubishi Materials, 3.IMS, Yokohama National Univ.)
[7a-P05-13]Purification of Carbon Nanotube Synthesized by Microwave-activated Catalysts Selective Heating
〇(M1)Masakatsu Fujii1, I P. Abdi Karya1, Kohei Nakagawa2, Takuma Iwamoto1, Fumihiro Nishimura3, Ryoichi Ishimatsu1, Toyohiko Nishiumi1, Takayuki Asano1,2, Seitaro Mitsudo1,2 (1.Fukui Univ, 2.FIR, Fukui Univ, 3.HISAC, Fukui Univ)
[7a-P05-14]Dielectric Characterization of Carbon Nanotubes with Residual Catalysts Using a Low-cost Vector Network Analyzer
〇(M1)Sei Nonomura1, Masakatsu Hujii1, Yamato Terui1, I P. Abdi Karya2, Kouhei Nakagawa2, Ryoichi Ishimatsu1, Toyohiko Nishiumi1, Takayuki Asano1,2, Seitaro Mitsudo1,2 (1.Fac. of Eng., Univ. of Fukui, 2.FIR Center, Univ. of Fukui)
[7a-P05-15]Elongation condition of carbon nanotube yarn spun using gas discharge breakdown (II) -Effect of addition of discharge electrode-
〇Ao Tamai1, Hiroki Mannaka1, Hideki Sato1 (1.Mie Univ.)
[7a-P05-16]Increased Concentration of Iron-Filled Carbon Nanotubes in Polymer Nanofibers
〇Kota Suzuki1, Yuji Fujiwara1, Hideki Sato1 (1.Mie Univ.)
[7a-P05-17]Response Characteristics to THz and NIR Electromagnetic Waves for CNT/Graphene Hybrid Structure
〇Junichi Fujikata1, Takuya Iwasaki2, Maki Nakatani3, Tomo Tanaka4, Makoto Ogo5, Yuma Yoshinaga5, Tsuyoshi Kubota5, Satoshi Moriyama5, Kou Li6, Yukio Kawano6,7,8, Hiroki Ago3, Ryota Yuge4 (1.Tokushima Univ., 2.NIMS, 3.Kyushu Univ., 4.NEC, 5.Tokyodenki Univ., 6.Chuo Univ., 7.KISTEC, 8.NII)
[7a-P05-18]Synthesis of magnetic micro particles and carbon quantum dots by pyrolysis with flavonoids of supercritical fluids
〇Yuma Kaizuka1, Shunji Kurosu2 (1.Toyo Univ, 2.Toyo Univ BNERC)
[7a-P05-19]Effect of the pre-cursor graphite flake size on the fabrication of continuous monolayer graphene oxide films
〇Emi Maeda1, De Silva Kanishka1, Yoshimura Masamichi1 (1.Toyota Tech. Inst.)
[7a-P05-20]Effect of plasma treatment on iron azaphthalocyanine-supported carbon materials
〇(M1)Tsukasa Irie1, Takayuki Ohta1 (1.Meijo Univ)
[7a-P05-21]Synthesis and electrocatalytic evaluation of molybdenum carbide nanoparticles synthesized by high temperature and high pressure treatment of organic molybdenum compounds
〇(M1)Sota Sato1, Hiroki Waizumi1,2, Seiya Yokokura1,2, Toshihiro Shimada1,2 (1.Graduate school of chemical sciences Hokkaido Univ, 2.Graduate school of engineering Hokkaido Univ)
[7a-P05-22]Fundamental characteristics of nanocarbon-assisted etching on semiconductor surface
- Elucidation of the effect of catalyst-film thickness on selective etching -
〇Naoki Kuwata1, Seiya Yamamoto1, Kouji Inagaki1, Kenta Arima1 (1.UOsaka)
[7a-P05-23]Demonstration of vertically aligned multilayer graphene
〇(DC)Koki Nozawa1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of. Tsukuba)
[7a-P05-24]Direct CVD growth of ribbon-shaped graphene on sapphire
〇(M1)Yuuki Ohara1, Kae Yokohira1, Takato Oda1, Yoshikazu Kawai1, Hiroki Hibino1 (1.Kangaku Univ.)
[7a-P05-25]STM observation of the dehydrogenation process in hydrogen-intercalated graphene on SiC
〇(B)Shota Uchida1, Anton Visikovskiy2, Sukran Kutlu2, Tomonori Ikari1, Satoru Tanaka2 (1.NIT, Ube College, 2.Kyushu Univ.)
[7a-P05-26]Morphology control of graphene grown on SiC by CVD (1)
〇(M2)Banri Wada1, Anton Visikovskiy1, Satoru Tanaka1 (1.Kyushu Univ.)
[7a-P05-27]Molecular dynamics of thermal property control in electron-irradiated graphene (2)
〇Ryohei Higashiyama1, Masaaki Yasuda1 (1.Osaka Metropolitan Univ.)
[7a-P05-28]Morphology control of graphene grown on SiC by CVD (2), Effects of nitrogen annealing
〇(D)Sukran Kutlu1, ANTON VISIKOVSKIY1, TANAKA SATORU1 (1.Kyushu University)
[7a-P05-29]Effect of K concentration on electrical properties of stacked graphene layer
〇Yuki Okigawa1, Shuichi Ogawa2, Yasutaka Tsuda3, Akitaka Yoshigoe3, Tomoaki Masuzawa4, Mitsuihiro Okada1, Takatoshi Yamada1 (1.AIST, 2.Nihon Univ., 3.JAEA, 4.Shizuoka Univ.)
[7a-P05-30]Work function of H-intercalated multilayer graphene on SiC(0001)
〇(M2)Mahiro Kubo1, Insung Seo1, Hiroyuki Kageshima1 (1.Shimane Univ.)
[7a-P05-31]Synthesis of reduced graphene oxide hydrogel for organic dye adsorption
〇Kota Amano1, Kanishka De Silva1, Chi Nhan Ha Thuc2, Nhien Le Hon2, Masamichi Yoshimura1 (1.Toyota Tech. Inst., 2.HCM Univ. of Sci.)
[7a-P05-32]Fabrication and Transport Characterization of Graphene Field-Effect Transistors on SiC
〇Tianchen Huang1, Banri Wada2, Kenji Watanabe3, Takashi Taniguchi3, Satoru Tanaka2, Akinobu Kanda1 (1.Univ. Tsukuba, 2.Kyushu Univ., 3.NIMS)
[7a-P05-33]Spacer size effects on stability for suspended structures of graphene/nanospacer stacking films
〇Shinnosuke Yoshida1, Mingda Ding1, Taiki Inoue1, Hirotaka Okita2, Yoshihiro Kobayashi1 (1.UOsaka Eng., 2.UOsaka SANKEN)
[7a-P05-34]Electromagnetic interference shielding property of p-type doped three-layer stacked graphene on PET in K band
〇Kosei Tomizawa1, Ryota Okuda1,2, Yasunari Hashimoto1, Takeshi Watanabe1, Ryosuke Suga1, Shinji Koh1 (1.Aoyama Gakuin Univ., 2.AGC Inc.)
[7a-P05-35]Influence of Cl- ions on an epitaxial graphene FET pH sensor on SiC substrate
〇Kouji Ueno1, Chikato Furukawa1, Yasuhide Ohno1 (1.Tokushima Univ.)
[7a-P05-36]Low-Voltage Operation FETs Utilizing Graphene/ Hf0.5Zr0.5O2 Heterostructure
〇(M1)Hiroshi Takase1,2, Masato Kikuchi1, Yoshiyuki Harada1,2, Akira Fujimoto1,2, Kazuto Koike1,2, Nobuya Hiroshiba1,2 (1.Osaka Inst. Tech., 2.NMRC, Osaka Inst. Tech.)
[7a-P05-37]Characterization of ozone-oxidized SiO2 for interlayer films in graphene/Si solar cells
〇(M1C)Yuto Kimura1, Kazushi Inoue1, Katsuyuki Yagi1, Koki Nakane1, Eiji Hatta1, Kazuhisa Sueoka1, Agus Subagyo1 (1.Graduate School of IST, Hokkaido Univ.)
[7a-P05-38]Electrical properties of transfer-free graphene on sapphire substrates formed via the agglomeration phenomenon along the thick Ni pattern
〇Naoyuki Sasada1 (1.NITech)
[7a-P05-39]Structural Verification of SiC Remote Epitaxial Growth
〇Mitsuru Morimoto1, Takuji Maekawa1, Yoshinori Miyamae1, Ken Nakahara1, Hiroyuki Kageshima2 (1.ROHM Co., Ltd., 2.Shimane Univ.)
[7a-P05-40]Simulation of remote epitaxial film removal using DeepMD
〇Shuto Araki1, Mitsuru Morimoto1, Takuji Maekawa1, Yoshinori Miyamae1, Ken Nakahara1, Shigenobu Ogata2 (1.Rohm Co., Ltd., 2.Osaka Univ.)
[7a-P05-41]Plasmon-Enhanced Optical Transparency in Graphene/Ag/Graphene Composite Film
〇Ren Kojima1, Shiguma Aoki1, Kintaro Nakazawa1, Takeshi Watanabe1, Shinji Koh1 (1.Aoyama Gakuin Univ.)
[7a-P05-42]Visualizing Defect Mapping of Laser-Induced Graphene with ERT
〇Keiya Minakawa1, Yuki Kimura1, Tirawat Nontiwantok2, Winadda Wongwiriyapan2, Osamu Kubo3, Takashi Ikuno1 (1.Tokyo Univ. of Sci., 2.KMITL, 3.Gifu Univ.)
[7a-P05-43]Correlation between CVD growth conditions and crystal shape of NbSe2 thin film
〇(M2)Shogo Masegi1, Yasushi Ishiguro1, Takashi Tachiki1 (1.National Defense Academy)
[7a-P05-44]Growth of MoTe2 films by tellurization of MoO3 films and its electrical properties
〇(M2)Yuichiro Isaka1, Yasushi Ishiguro1, Takashi Tachiki1 (1.National Defense Academy)
[7a-P05-45]Direct growth of WS2 thin film by sulfurization of W thin film at Au/SiO2 interface
〇(M2)Chika Akimoto1, Keiji Ueno1, Hong En Lim1 (1.Saitama Univ.)
[7a-P05-46]Growth of organic thin films on the layer numbers of layered semiconducting materials
Ibuki Tukamoto1, 〇(M1)Ryota Iijima1, Souma Nisinakamura1, Rinshiro Okada1, Ryota Fujita1, Kento Ueno1, Yoshihiro Shimazu1, Shinya Ohno1 (1.Yokohama Nat'l Univ.)
[7a-P05-47]Forster Resonance Energy Transfer between Rhodamine 6G and MoS2 Nanosheets Synthesized with Green Tea Extract
〇(D)Ankita Sarma1, Ayswarya Mukherjee1, Rathinasamy K1, Anirban Sarkar1 (1.NIT Calicut)
[7a-P05-48]Contact Engineering of 2D Materials using Sub-nm-thick Triphenylphosphine Molecular Layer
〇(P)Puneet Jain1, Daisuke Kiriya1 (1.The University of Tokyo)
[7a-P05-49]Investigation of Structural Modulation in Two-Demensional semiconductors with organic polymer enwrapment
〇(M2)Ryoichiro Naoi1, Daisuke Kiriya1 (1.The Univ. of Tokyo)
[7a-P05-50]Synthesis of Janus Ga2SSe and investigation of its Raman spectraby first-principle calculations
〇(M2)Shouhei Yamaguchi1, Hong En Lim1, Keiji Ueno1 (1.Saitama Univ.)
[7a-P05-51]Interconversion of layered 1T'-MoTe2 and wired Mo6Te6 nanoribbons
〇(M1)Hayate Nakano1, Itsuki Yamada1, Shintaro Saito1, Keiji Ueno1, Hong En Lim1 (1.Saitama Univ.)
[7a-P05-52]Synthesis of 1T-MoS2 by caffeine intercalation
〇Ryunosuke Tange1, Seiya Yokokura1,2, Hiroki Waizumi1,2, Tosihiro Shimada1,2 (1.CSE. Hokkaido Univ., 2.Eng. Hokkaido Univ.)
[7a-P05-53]Exploring the moiré exciton states in twisted WSe2 trilayer
〇Ryo Sakumura1, Shinichiro Matano1, Kenji Watanabe2, Takashi Taniguchi2, Kazunari Matsuda1 (1.Kyoto Univ. IAE, 2.NIMS)
[7a-P05-54]Shift Current Generation Induced by Electric-Field-Driven Ferroelectric Phase Transition in 2D GeS
〇Kai Matsuura1, Shinichiro Matano1, Kazunari Matsuda1 (1.Kyoto Univ. IAE)
[7a-P05-55]Strain Enhanced Indirect-gap Transition of Few-layer Molybdenum Disulfide on Patterned Polymer Substrate
〇(M1)PoHan Chen1, Daisuke Kiriya1 (1.Univ. of Tokyo)
[7a-P05-56]N-type doping of MoS2 MOSFET via Enzymatic Reaction
〇Natsumi Ishida1, Takashi Kobayashi1, Huiqin Liu1, Daisuke Kiriya1 (1.The Univ. Tokyo)
[7a-P05-57]pH-dependent doping control of MoS2 with heterocyclic compounds
〇(M1)Takuya Suzuki1, Takashi Kobayashi1, Daisuke Kiriya1 (1.The Univ. of Tokyo)
[7a-P05-58]Electrochemically Synthesized Viologen Radical for Degenerated Doping of MOSFETs
〇(D)Huiqin Liu1, Guanting Liu1, Daisuke Kiriya1 (1.Univ. of Tokyo)
[7a-P05-59]Voltage-Regulated Reconfigurable p- and n-type WSe2 Field-effect Transistor
〇(P)Guanting Liu1, Daisuke Kiriya1 (1.Univ. of Tokyo)
[7a-P05-60]Study on Mechanism of Indirect -Direct Transition in MoS2 thin films by first-principles calculation
〇Shunsuke Hirai1, Ibuki Terada1, Michito Suzuki1 (1.Osaka Metrpolitan Univ.)
[7a-P05-61]Introduction of Se defects on the surface by UV-O3 exposure and vacuum annealing to realize ALD on WSe2
〇Riku Enomoto1, Kensho Matsuda1, Ke Mengnan2, Peter Kruger1, Nobuyuki Aoki1 (1.Chiba Univ., 2.Yokohama National Univ.)
[7a-P05-62]Raman, Photoluminescence, and AFM Studies of MoS2/WSe2 Heterostructures
〇Tsuyoshi Takaoka1, Sushen Chandra Devsharma2, Mitsuhiro Okada3, Takatoshi Yamada3, Toshitaka Kubo3, Atsushi Ando3, Tadahiro Komeda1 (1.IMRAM, Tohoku Univ., 2.Sci, Tohoku Univ., 3.AIST)
[7a-P05-63]Electrode Metal Dependence of Photocurrent Characteristics of Methylated Germanane
〇Akiar Nishino1, Daichi Kato1, Osamu Kubo1 (1.Gifu Univ. Grad. sch.)
[7a-P05-64]Polarization-Induced 2DEG and 2DHG Probed by Terahertz Spectroscopy
〇Verdad Agulto1, Shuang Liu1, Kosaku Kato1, Thanh Nhat Khoa Phan1, Yu-Hsin Chen2, Chuan Chang2, Joseph Dill2, Jimy Encomendero2, Debdeep Jena2, Huili Grace Xing2, Jia Wang3, Haitao Wang3, Hiroshi Amano3, Makoto Nakajima1 (1.Univ. of Osaka, 2.Cornell Univ., 3.Nagoya Univ.)
[7a-P05-65]Spatial distribution of exciton fluorescence in monolayer MoS2 Suspended Structures
〇Ko Aoyagi1, Daichi Kokubo1, Shiki Nakyama1, Hiroyuki Mogi1, Yusuke Arashida1, Shoji Yoshida1, Osamu Takeuchi1, Hidemi Shigekawa1 (1.Tukuba Univ.)
[7a-P05-66]Absorption wavelength control of black phosphorus/plasmonic nanogratings by carrier density
〇Manabu Iwakawa1, Shoichiro Fukushima1, Masaaki Shimatani1, Shinpei Ogawa1 (1.MitsubishiElectric)
[7a-P05-67]Analysis of Photon-Enhanced Thermionic Emission and Adsorption State on Cs/O2 Adsorbed MoS2 Surfaces
〇(M1)Rikiya Matsushima1, Akihisa Ogino1 (1.Shizuoka Univ.)
[7a-P05-68]CNT-Modified Transition Metal Dichalcogenide Memristors for Brain-Inspired Nociceptive Emulation
〇(P)Elamaran Durgadevi1, Masahiro Sakai1, Daisuke Kiriya1 (1.The Univ. of Tokyo)
[7a-P05-69]Hysteresis Reduction in Layered Material Channel Field-Effect Transistors with Gallium Sulfide as Buffer Layer
〇(M1)Rei Shiina1, Hong En Lim1, Keiji Ueno1 (1.Saitama Univ.)
[7a-P05-70]Gas response comparison of FETs with MoS2 and carbon nanotube channels
〇Masafumi Inaba1, Mitsuhiro Okada2, Yuki Okigawa2, Takatoshi Yamada2 (1.Kyushu Univ., 2.AIST)
[7a-P05-71]Doping-dependent valley polarization induced by Mott transition in WSe2/WS2 moiré superlattice
〇(D)Li Zhiwei1, Kazunari Matsuda1, Takashi Taniguchi2, Kenji Watanabe2 (1.Kyoto Univ., 2.NIMS)
[7a-P05-72]Bulk photovoltaic effect in 2D magnetic layered materials CrPS4
〇Shuichi Asada1, Shinichiro Matano1, Kenji Watanabe2, Takashi Taniguchi2, Kazunari Matsuda1 (1.IAE, Kyoto Univ., 2.NIMS)
[7a-P05-73]Modulation of the electronic and optical properties of MoS2 by in-situ sulfur vapor deposition
〇(DC)Takumi Yoshida1, Hideki Hamamoto1, Yasushi Ishiguro2, Kazuyuki Takai1 (1.Hosei Univ., 2.National Defense Acad.)
[7a-P05-74]Structural Optimization of Memory and Selector Devices Based on MoTe2
〇Kentarou Uzawa1, Hirotaka Tsutsui1, Takuya Iwasaki2, Ryoma Hayakawa2, Kenji Watanabe2, Takashi Taniguchi2, Shu Nakaharai3, Yutaka Wakayama2, Satoshi Moriyama1 (1.Tokyo Denki Univ., 2.NIMS, 3.Tokyo Univ. Tech.)
[7a-P05-75]Performance enhancement of dual-gate FET using F6-TCNNQ monolayer on WSe2
〇Kensho Matsuda1, Yuto Noguchi1, Seto Taiki1, Mengnan Ke2, Shohei Kumagai3, Toshihiro Okamoto3, Nobuyuki Aoki1 (1.Chiba Univ., 2.Yokohama National Univ., 3.Science Tokyo Univ.)
[7a-P05-76]Characterization of switching response of MoTe2-based resistive switching devices
〇Hirotaka Tsutsui1, Kentaro Uzawa1, Takuya Iwasaki2, Ryoma Hayakawa2, Kenji Watanabe2, Takashi Taniguchi2, Shu Nakaharai3, Yutaka Wakayama2, Satoshi Moriyama1 (1.Tokyo Denki Univ., 2.NIMS, 3.Tokyo Univ. Tech.)
[7a-P05-77]Development of UV tape transfer of MoS2 for fabrication of transistors
〇Nanaka Hasegawa1, Satoru Fukamachi1, Maki Nakatani1, Aika Uchida1, Satoshi Honda2, Atsushi Yasui2, Hiroki Ago1,3 (1.Kyushu Univ., 2.Nitto Denko, 3.Kyushu Univ.CSeDE)
[7a-P05-78]Hysteresis properties of MoS2 FETs with TaOx gate dielectrics grown on TaS2
〇(M2)YUTARO SAHASHI1, Inada Mitsuru1, Ueno Keiji2, Yamamoto Mahito1 (1.Kansai Univ., 2.Saitama Univ.)
[7a-P05-79]Observation of Shift Current in Bulk GeSe during Antiferroelectric to Ferroelectric Phase Transition
〇Joanne Martinez1, Shinichiro Matano1, Kazunari Matsuda1 (1.Kyoto Univ.)
[7a-P05-80]Gold-Mediated Exfoliation of Transition Metal Dichalcogenides and Residue Evaluation
〇Yusuke Nakamura1, Yusuke Nakayama1, Yanjun Heng1, Nobuyuki Aoki1 (1.Chiba univ.)