Presentation Information
[7a-P05-48]Contact Engineering of 2D Materials using Sub-nm-thick Triphenylphosphine Molecular Layer
〇(P)Puneet Jain1, Daisuke Kiriya1 (1.The University of Tokyo)
Keywords:
Molybdenum disulfide (MoS2),Doping,Thin-film transistor (TFT)
In the present work, we fabricated thin-film transistor (TFT) using MoS2 monolayer (ML) as channel. Since 2D materials have an issue of large contact resistance, which is due to strong Fermi level pinning between the metal electrode and 2D material, which causes a large Schottky barrier height. So here we tried to reduce the Schottky barrier height by doping below the electrodes region. The dopant we have selected is triphenylphosphine, as it has lone pair of electrons, which can lead to degeneracy, if doped in the channel region of a TFT with MoS2 ML as channel.