[7p-N202-1~14] 6.4 Thin films and New materials

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[7p-N202-1] [Invited Talk] Elucidating the expansion mechanism of basal plane dislocations in 4H-SiC through first-principles calculations

〇Masaki Sano¹, Jun Kojima², Shoichi Onda², Takashi Yoda³, Takayuki Ohba³, Atushi Oshiyama², Kenji Shiraishi² (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.WOW Alliance, Inst. Sci. Tokyo.)

Keywords:

SiC,Basal Plane Dislocation,First Principle Calculation