[7p-N202-1~14] 6.4 Thin films and New materials

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N202-8] Defect-induced magnetism in Gd3Ga5O12 thin film

〇(M2)Ryoken Nako^1,2, Shamim Sarker^1,2, Hiroyasu Yamahara^1,2, Hitoshi Tabata^1,2 (1.Univ. of Tokyo, 2.Inst. For AI and Beyond)

Keywords:

defect,oxide,magnetism

Gd3Ga5O12 is a paramagnetic substrate material with good lattice matching to the spin-wave material Y3Fe5O12. If the magnetism of Gd3Ga5O12 can be controlled, it would facilitate magnetic control of adjacent layers. In this study, Y3Al5O12, which has a 3% lattice mismatch with Gd3Ga5O12, was selected as the substrate to induce defect-induced magnetism, and Gd3Ga5O12 thin films were grown by pulsed laser deposition. Magnetization measurements by a SQUID revealed a maximum saturation magnetization of 87 emu/cm³ and a dependence of the saturation magnetization on crystallinity. These results suggest that the anomalous magnetism in Gd3Ga5O12 originates from oxygen vacancies.