[7p-N301-1~17] CS.7 Code-sharing session of 6.1&13.3&13.5

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)English Presentation

[7p-N301-1] Strain-Driven Solid Phase Epitaxy for Ferroelectricity and Uniformity Enhancement in Hf_1-xZr_xO₂ Thin Films

〇(D)KuanMing Chen¹, Ming-Lun Tsai², Chia-Wei Hsu¹, Yuan-Chieh Tseng¹ (1.Department of Materials Science and Engineering, National Yang Ming Chiao Tung Univ., Taiwan, 2.Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung Univ., Taiwan)

Keywords:

solid phase epitaxy,ferroelectric,tensile strain

We demonstrate strain-driven solid phase epitaxy (SPE) for Hf_1-xZr_xO₂ ferroelectric thin films. A 2 nm HZO seed layer was crystallized under tungsten (W) capping layers (3-50 nm) to introduce tensile strain that controls phase formation and grain size. The optimized 10 nm W cap enhances orthorhombic phase formation for high 2P_r, while a 3 nm β-W cap suppresses non-uniform growth, improving uniformity and achieving wake-up-free operation. This approach enables high-performance ferroelectric devices under a 500°C thermal budget, promising for BEOL integration.