Session Details

[7p-N301-1~17]CS.7 Code-sharing session of 6.1&13.3&13.5

Sun. Sep 7, 2025 1:00 PM - 5:30 PM JST
Sun. Sep 7, 2025 4:00 AM - 8:30 AM UTC
N301 (Lecture Hall North)

[7p-N301-1]Strain-Driven Solid Phase Epitaxy for Ferroelectricity and Uniformity Enhancement in Hf1-xZrxO2 Thin Films

〇(D)KuanMing Chen1, Ming-Lun Tsai2, Chia-Wei Hsu1, Yuan-Chieh Tseng1 (1.Department of Materials Science and Engineering, National Yang Ming Chiao Tung Univ., Taiwan, 2.Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung Univ., Taiwan)

[7p-N301-2]Size effects on phase-formation and polarization behavior of
ZrO2-based solid solution films

Yuta Kuribayashi1, Takuma Ito1, Yukie Yokota1, 〇Hiroshi Uchida1 (1.Sophia Univ.)

[7p-N301-3]Structural and stability evaluation of HfO2-based ferroelectric Y0.06Nb0.06Hf0.88O2

〇Shutaro Asanuma1, Shinji Migita1, Hiroyuki Ota1, Yukinori Morita1, Shogo Hatayama1 (1.SFRC AIST)

[7p-N301-4]Tuning ferroelectricity and crystallographic orientation of Y-doped HfO2 thin films directly deposited on silicon via RF magnetron sputtering

〇Shinya Kondo1,2, Tomoshige Ono2, Hinata Sawaki1, Toshiya Murai3, Rai Kou3, Kazuki Okamoto4, Funakubo Hiroshi4, Teranishi Takashi2, Akira Kishimoto2, Tomoaki Yamada1,5 (1.Nagoya Univ., 2.Okayma Univ., 3.AIST, 4.Science Tokyo, 5.Science Tokyo MDX)

[7p-N301-5]Growth of orientation-controlled (100)-oriented rare-earth-doped epitaxial HfO2thin films

〇(M2)Yutaro Tsuchiya1, Yuxian Hu1, Kazuki Okamoto1, Wakiko Yamaoka2, Yasunaga Kagaya2, Yukari Inoue2, Hiroshi Funakubo1 (1.Science Tokyo, 2.TDK Corporation)

[7p-N301-6]Changes in the chemical states of Al-doped HfO2 thin films induced by electric field cycling

〇Tomoya Mifune1, Hideaki Tanimura1,2, Yuma Ueno2, Yusuke Tani2, Hironori Fujisawa1, Seiji Nakashima1, Ai I. Osaka1, Yasumasa Takagi3, Akira Yasui3, Jiayi Tang3, Shinichi Kato2, Takumi Mikawa2 (1.Univ. of Hyogo, 2.SCREEN, 3.JASRI)

[7p-N301-7]Enhancement of Polarization Properties of Al:HfO2 Thin Films through Multi-Shot Flash Lamp Annealing

〇Yusuke Tani1, Yuma Ueno1, Hideaki Tanimura1, Tomoya Mifune2, Hironori Fujisawa2, Seiji Nakashima2, Ai I Osaka2, Shinichi Kato1, Takumi Mikawa1 (1.SCREEN Semiconductor Solutions, 2.University of Hyogo)

[7p-N301-8]Electric field dependence of cycle endurance in
HfO2-based ferroelectric capacitors

〇Yuki Itoya1, Takuya Saraya1, Toshiro Hiramoto1, Masaharu Kobayashi1,2 (1.IIS, 2.d.lab)

[7p-N301-9]Simulation-based Verification of the Physical Mechanism Model for Wake-up Effect in Ultrathin Ferroelectric Hf0.5Zr0.5O2

〇Kosuke Ito1, Mitsuru Takenaka1, Shinichi Takagi1,2, Kasidit Toprasertpong1 (1.Univ. Tokyo, 2.ACRO)

[7p-N301-10]Impact of polarization switching control on physical reservoir computing performance in a HfO2-based ferroelectric MFM capacitor

〇Sota Inoue1, Yu Ukezeki1, Norifumi Fujimura1, Kasidit Toprasertpong2, Shinichi Takagi2, Takeshi Yoshimura1 (1.Osaka Metro. Univ., 2.The Univ. of Tokyo)

[7p-N301-11]Impact of polarization characteristics on computational performance of ferroelectric-gate FET-based physical reservoir computing

〇Yu Ukezeki1, Sota Inoue1, Norifumi Fujimura1, Tokuji Yokomatsu2, Kensuke Kanda2, Kazusuke Maenaka2, Kasidit Toprasertpong3, Shinichi Takagi3, Takeshi Yoshimura1 (1.Osaka Merto. Univ., 2.University of Hyogo, 3.The Univ. of Tokyo)

[7p-N301-12]Investigation of Degradation in FeFETs Using Quasi-Static Split C–V Techniques: Significant Trap Generation under Cycling Stress

〇Xuanhedong Gao1, Zuocheng Cai1, Zhenghong Liu1, Zhao Jin1, Xueyang Han1, Yan-kui Liang1, Yutong Chen1, Eishin Nako1, Shin-Yi Min1, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1.The Univ.of Tokyo)

[7p-N301-13]Imprint Behaviors of Hf0.5Zr0.5O2 Ferroelectric Capacitors: Charge/Trap-site Dynamics during Write and Wake-up Cycles

〇(D)Zhenhong Liu1, Zuocheng Cai1, Mitsuru Takenaka1, Shinichi Takagi2, Kasidit Toprasertpong1 (1.Univ. Tokyo, 2.Teikyo Univ.)

[7p-N301-14]Cycling induced imprint phenomenon at intermediate state used for multi-level operation in HfO2-FeFET

〇Viktoria Schlykow1, Kunifumi Suzuki1, Yoko Yoshimura1, Hidesato Ishida1, Kiwamu Sakuma1, Kazuhiro Matsuo1, Masumi Saitoh1, Reika Ichihara1 (1.Kioxia Corporation)

[7p-N301-15]Simulation of Polarization Characteristics in Ferroelectric Thin Films

〇Masanori Okuyama1 (1.Osaka Univ.)

[7p-N301-16]Physical meaning of ρ in L-K equation

〇Akira Toriumi1, Shinji Migita2 (1.None, 2.AIST)

[7p-N301-17]Observation of sweep-speed dependence of C-V characteristics in ferroelectric HfxZr1-xO2

〇Hiroyuki Matsukawa1, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1.Univ.Tokyo)