Presentation Information
[7p-N301-13]Imprint Behaviors of Hf0.5Zr0.5O2 Ferroelectric Capacitors: Charge/Trap-site Dynamics during Write and Wake-up Cycles
〇(D)Zhenhong Liu1, Zuocheng Cai1, Mitsuru Takenaka1, Shinichi Takagi2, Kasidit Toprasertpong1 (1.Univ. Tokyo, 2.Teikyo Univ.)
Keywords:
Hafnia-based ferroelectrics,reliability issues,imprint