Presentation Information
[7p-N301-15]Simulation of Polarization Characteristics in Ferroelectric Thin Films
〇Masanori Okuyama1 (1.Osaka Univ.)
Keywords:
ferroelectric thin film,simulation,polarization hysteresis
Polarization characteristics have been simulated numerically by analysis of Landau model. α, β and γ in free energy are obtained from polarization hysteresis and its temperature dependence of AlScN and ZnMgO thin films, and the polarization hystereses are analyzed numerically. Polarization hysteresis and transient responses of polarization and current under step-like electric field are calculated in polarization lattice model with inactive polarizations induced by imperfections such as defect and dislocation, considering interaction between neighboring polarizations, and their behaviors are discussed.