Presentation Information
[7p-N302-12]Single crystal growth of multilayered 2H-MoTe2 growth by CVD technique with ammonium molybdate precursor
〇Tomoya Ebisawa1, Kaisei Itoh1, Takuto Ono1, Yusuke Hoshi1 (1.Tokyo City Univ.)
Keywords:
semiconductor,2D materials
Multilayer 2H-MoTe2 films were synthesized by chemical vapor deposition (CVD), and the effect of Te flux on crystal growth was investigated by varying the Te source temperature from 280°C to 700°C. Crystalline domains were observed on the substrate surface at 510°C and 700°C. Raman spectrum revealed that the hexagonal-shaped domains grown at 510°C correspond to the semiconducting 2H phase, while the randomly shaped domains grown at 700°C were identified as the metallic 1T' phase. Furthermore, photoluminescence (PL) spectrum was performed to evaluate the crystal quality. A distinct excitonic emission peak around 1.06 eV was observed in the sample grown at 510°C, indicating the formation of few-layer (2–3 layers) 2H-MoTe2 with high crystallinity.