The 86th JSAP Autumn Meeting 2025
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Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[7p-N302-1~19]17.3 Layered materials

Sun. Sep 7, 2025 1:30 PM - 6:30 PM JST
Sun. Sep 7, 2025 4:30 AM - 9:30 AM UTC
N302 (Lecture Hall North)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[7p-N302-1]Grain Boundary-mediated Self-aligned Single Crystallization of MoS2 Monolayer on Sapphire Substrate

〇Yoshiki Sakuma1, Takanobu Hiroto1, Jun Nara1, Akihiro Ohtake1, Yuki Ono2, Takashi Matsumoto2 (1.NIMS, 2.Tokyo Electron Technology Solutions Ltd.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[7p-N302-2]Self-limiting Growth of MoS2 Monolayers on C-plane Sapphire Substrates by MOCVD

〇Yoshiki Sakuma1, Takanobu Hiroto1, Jun Nara1, Yuki Ono2, Takashi Matsumoto2 (1.NIMS, 2.Tokyo Electron Technology Solutions Ltd.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[7p-N302-3]Low-Temperature Deposition of Sulfides via Sulfur Plasma-Driven Reactive Sputtering

〇ISSEI SUZUKI1, Daiki Motai1, Taichi Nogami1, Takahisa Omata1 (1.Tohoku Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[7p-N302-4]Preparations of WS2 ultrathin films by sulfurization of W sputtered films

〇Hayate Takagi1, Yusuke Wada1, Fumitaka Ohashi1,2, Himanshu Jha1,2, Tetsuji Kume1,2 (1.GNST, Gifu Univ, 2.Eng, Gifu Univ)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N302-5]Quality Enhancement of PVD-WS2 Thin Film using H2S Annealing

〇Soma Ito1, Naoki Matsuanga1, Kaede Teraoka1, Jaehyo Jang1, Taiga Fuse1, Shunsuke Nozawa1, Iriya Muneta1, Takuya Hosii1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1 (1.Science Tokyo)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N302-6]Evaluation of MoS2 films prepared by vacuum heating of Mo films immersed in sulfur liquid

〇(M1C)Kazushi Inoue1, Yuto Kimura1, Katsuyuki Yagi1, Koki Nakane1, Eiji Hatta1, Kazuhisa Sueoka1, Agus Subagyo1 (1.Graduate School of IST, Hokkaido Univ.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[7p-N302-7]Boron thin films grown on Ni(111) thin films on Sapphire Substrates by MBE

〇Nao Ishii1, Takashi Azuhata1, Hideki Nakazawa11, Masanobu Hiroki2, Kazuyuki Hirama2, Yasuyuki Kobayashi1 (1.Hirosaki Univ., 2.NTT BRL)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[7p-N302-8]CVD growth of h-BN nanosheets on Ge thin-films / Si substrates

〇(M1)Kai Tsukada1, Kentaro Watanabe1,2 (1.Shinshu Univ., 2.IFES, Shinshu Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[7p-N302-9]Synthesis of boron carbon nitrides by high-energy ion irradiation

〇Shiro Entani1, Masaru Takizawa2, Makoto kohda3,1 (1.QST, 2.Ritsumeikan Univ., 3.Tohoku Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[7p-N302-10]Enhancement of Al2O3 band gap with Al seed kayer deposited by sputtering on MoS2 film

〇Mitsuru Taga1, Shunsuke Nozawa1, Takuya Hoshii1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1 (1.Institute of Science Tokyo)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[7p-N302-11]Synthesis and evaluation of electrical characterization of metastable layered semiconductor SiTe2

〇Kohki Tonoike1, Shogo Hatayama2, Mihyeon Kim1, Yuta Saito3,2,1 (1.Tohoku Univ., 2.AIST, SFRC, 3.Tohoku Univ. GXT)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[7p-N302-12]Single crystal growth of multilayered 2H-MoTe2 growth by CVD technique with ammonium molybdate precursor

〇Tomoya Ebisawa1, Kaisei Itoh1, Takuto Ono1, Yusuke Hoshi1 (1.Tokyo City Univ.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N302-13]GaSe layered compound epitaxial growth from the step edges on misoriented GaAs(001) substrate

〇Toya Kurokawa1, Nobuaki Kojima1 (1.Toyota Tech. Inst.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N302-14]Growth of thin Au film on c-Al2O3 substrate

〇Myeongok Kim1, Yoshitaka Okada1 (1.RCAST, UTokyo)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N302-15]Phase-Control Fabrication of MoTe2 Thin Films by RF Magnetron Sputtering and Tellurization Annealing in (i-C3H7)2Te Atmosphere

〇Sota Higashi1, Taichi Ishikawa1, Hiroshi Yokota1, Ryo Yokogawa2,3,4, Hideaki Machida5, Masato Ishikawa5, Hiroshi Sudoh5, Atsushi Ogura1,2 (1.School of Sci. and Technol., Meiji Univ., 2.MREL, 3.RISE, Hiroshima Univ., 4.Grad. School of Adv. Sci. and Eng., Hiroshima Univ., 5.Gas-phase Growth Ltd.)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[7p-N302-16]Structural Changes in Segregated Germanene by Hydrogenation

〇Seiya Suzuki1, Takahiro Ozawa2, Hirokazu Ueta1, Katsuyuki Fukutani1,2 (1.JAEA, 2.IIS, Univ. of Tokyo)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N302-17]Introduction of Strain in WSe2 and MoS2 grown on Graphene/SiC(0001)

〇Ryotaro Sakakibara1,2, Kaito Hirata3,4, Yasufumi Takahashi4, Wataru Norimatsu5, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ., 3.Nagoya Inst. Tech., 4.Nagoya Univ., 5.Waseda Univ.)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[7p-N302-18]Development of a 2D Material Transfer Process Combining Gold-Assisted Mechanical Exfoliation and PDMS Stamping

〇(M2)Daichi Kokubo1, Ko Aoyagi1, Shiki Nakayama1, Hiroyuki Mogi1, Yusuke Arashida1, Shoji Yoshida1, Osamu Takeuchi1, Hidemi Shigekawa1 (1.Tsukuba Univ.)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[7p-N302-19]Crystallographic-orientation-resolved interlayer friction microscope

〇Yuta Seo1, Nima Barri2, Boran Kumral2, Kenji Watanabe3, Takashi Taniguchi3, Tobin Filleter2, Tomoki Machida1 (1.IIS Univ. Tokyo, 2.Univ. Toronto, 3.NIMS)
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