[7p-N302-1~19] 17.3 Layered materials

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N302-14] Growth of thin Au film on c-Al₂O₃ substrate

〇Myeongok Kim¹, Yoshitaka Okada¹ (1.RCAST, UTokyo)

Keywords:

Au (111),Sapphire,Thermal evaporation

Performances of transition metal dichalcogenides (TMDCs) solar cells are susceptible to stresses imposed during device fabrication process, and direct epitaxial growth of TMDCs on metallic substrate can minimize the damage on TMDCs. In this research, we investigated the growth of Au (111) on sapphire by thermal evaporation on which epitaxial growth of TMDCs is possible. Growth temperature lower than the melting point of Au and substrate with both thermal and chemical stability are chosen for its facile application as an epi-substrate for TMDC growth. At substrate temperature of 550 ^oC, Au film showed (111) plane dominantly. However, the presence of other planes, (200) and (220), indicates that the film was still polycrystalline. Epitaxial relationship between Au [1-10] // Al₂O₃ [100] was also not observed. Although van der Waals epitaxy is expected on c-Al₂O₃, polycrystallinity might be attributed to weak substrate-film interaction and lattice mismatch between Al₂O₃ and Au.