Presentation Information

[7p-N304-10]Multivalued logic-in-memory based on a floating-gate-type organic antiambipolar transistor

〇Taiga Kijima1,2, Ryoma Hayakawa1,2, Kenji Katayama2, Yutaka Wakayama1 (1.NIMS, 2.Chuo Univ)

Keywords:

Logic-in-memory,Floating gate anti-ambipolar transistor,Organic semiconductor

In this presentation, we report the demonstration of a multi-valued Logic-in-Memory (LIM) device that integrates a ternary logic circuit and non-volatile memory functions using a special type of organic transistor called an anti-ambipolar transistor (AAT). The AAT has a p-n junction in its semiconductor layer and exhibits Negative Differential Transconductance (NDT), where the drain current transitions from increasing to decreasing as the gate voltage increases at room temperature. By using a gold floating gate (Au-FG) for the non volatile memory layer and HfO2 for the tunneling insulating layer, we realized a ternary LIM with a large shift in its operating voltage.