Presentation Information
[7p-N401-4]Effects of strain on polarization characteristics of exction photoluminescence in a GaSb/AlGaSb multiple quantum well grown on Si substrate
〇Daiki Yamaguchi1, Osamu Kojima1, Kouichi Akahane2 (1.Chiba Inst. Tech., 2.NICT)
Keywords:
multiple quantum wells,exciton photoluminescence,GaSb/AlGaSb
In this study, we investigated the polarization properties of a GaSb/AlGaSb strained multiple quantum well structure grown on a Si substrate, utilizing GaSb, a material of interest for optical communication wavelengths. To elucidate the effects of strain, we varied the polarization of the excitation light and evaluated the in-plane anisotropy of the photoluminescence intensity. As a result, stronger emission was observed along the [1-10] crystallographic direction. This anisotropy is attributed to the strain-induced anisotropic distribution of the heavy-hole density of states. Additionally, it was found that the intensity ratio decreased with increasing excitation power.