Presentation Information
[7p-N401-9]Wavelength Control and Defect-Free InGaN Nanoplatelets via Selective Etching and Regrowth
〇(DC)Qingyuan Han1, Wentao Cai2, Jia Wang2,3, Yuta Ito1, Yuta Furusawa2, Haitao Wang2, Heajeong Cheong1,2,4, Markus Pristovsek2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Dept. Electronics, NU, 2.IMaSS, NU, 3.IAR, NU, 4.DTSIC, NU)
Keywords:
MicroLED,RGB Monolithic Integration,Selective Area Growth
In this study, we achieved six distinct wavelengths within an area of 150 µm × 150 µm through selective height control of nanoplatelets by a single regrowth process.
Specifically, high-quality InGaN nanoplatelets were initially grown by MOVPE, followed by selective wet and dry etching to adjust their thicknesses step-by-step. Afterward, a collective regrowth was performed. As a result, nanoplatelets with varying In compositions and defect-free c-plane surfaces were successfully formed, enabling wavelength control from 400 nm to 540 nm.The morphology and surface quality of the nanoplatelets were confirmed via AFM and SEM observations, while the wavelength variations were evaluated using CL measurements. These results demonstrate that our method provides a promising pathway toward high-efficiency, monolithically integrated full-color µLEDs.
Specifically, high-quality InGaN nanoplatelets were initially grown by MOVPE, followed by selective wet and dry etching to adjust their thicknesses step-by-step. Afterward, a collective regrowth was performed. As a result, nanoplatelets with varying In compositions and defect-free c-plane surfaces were successfully formed, enabling wavelength control from 400 nm to 540 nm.The morphology and surface quality of the nanoplatelets were confirmed via AFM and SEM observations, while the wavelength variations were evaluated using CL measurements. These results demonstrate that our method provides a promising pathway toward high-efficiency, monolithically integrated full-color µLEDs.